Compact and Low-Power-Consumption 40-Gbit/s, 1.55-µm Electro-Absorption Modulators

Hideo ARIMOTO; Jun-ichiro SHIMIZU; Takeshi KITATANI; Kazunori SHINODA; Tomonobu TSUCHIYA; Masataka SHIRAI; Masahiro AOKI; Noriko SASADA; Hiroshi YAMAMOTO; Kazuhiko NAOE; Mitsuo AKASHI

doi:10.1093/ietele/e88-c.5.951

Compact and Low-Power-Consumption 40-Gbit/s, 1.55-µm Electro-Absorption Modulators

Hideo ARIMOTO, Jun-ichiro SHIMIZU, Takeshi KITATANI, Kazunori SHINODA, Tomonobu TSUCHIYA, Masataka SHIRAI, Masahiro AOKI, Noriko SASADA, Hiroshi YAMAMOTO, Kazuhiko NAOE, Mitsuo AKASHI

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This paper describes 40-Gbit/s operation of 1.55-µm electro-absorption (EA) modulators applicable to compact and low-cost transmitters for very-short-reach (VSR) applications. We start by identifying factors that make a multi-quantum-well (MQW) design suitable for high levels of output power and for uncooled operation. From the basic experimental results, we determine that a valence-band discontinuity ΔE_v at around 80 meV is optimal in terms of combining high-output-power operation and a good extinction ratio. We then apply the above findings in an InGaAsP-MQW EA modulator that is monolithically integrated with a distributed feedback (DFB) laser, and thus obtain operation with high output power (+1.2 dBm), a high ER (10.5 dB), and a low power penalty (0.4 dB after transmission over 2.6 km of single-mode-fiber). These results confirm the applicability of our EA modulator/DFB laser to VSR applications. After that, we theoretically demonstrate the superiority in terms of ER characteristics of the InGaAlAs-MQW over the conventional InGaAsP-MQW. InGaAlAs-MQW EA modulators are fabricated and demonstrate, for the first time, 40-Gbit/s operation over a wide temperature range (0 to 85).

Publication: IEICE TRANSACTIONS on Electronics Vol.E88-C No.5 pp.951-959

Publication Date: 2005/05/01

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DOI: 10.1093/ietele/e88-c.5.951

Type of Manuscript: Special Section PAPER (Joint Special Section on Recent Progress in Optoelectronics and Communications)

Category: Optical Active Devices and Modules

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Hideo ARIMOTO, Jun-ichiro SHIMIZU, Takeshi KITATANI, Kazunori SHINODA, Tomonobu TSUCHIYA, Masataka SHIRAI, Masahiro AOKI, Noriko SASADA, Hiroshi YAMAMOTO, Kazuhiko NAOE, Mitsuo AKASHI, "Compact and Low-Power-Consumption 40-Gbit/s, 1.55-µm Electro-Absorption Modulators" in IEICE TRANSACTIONS on Electronics, vol. E88-C, no. 5, pp. 951-959, May 2005, doi: 10.1093/ietele/e88-c.5.951.
Abstract: This paper describes 40-Gbit/s operation of 1.55-µm electro-absorption (EA) modulators applicable to compact and low-cost transmitters for very-short-reach (VSR) applications. We start by identifying factors that make a multi-quantum-well (MQW) design suitable for high levels of output power and for uncooled operation. From the basic experimental results, we determine that a valence-band discontinuity ΔE_v at around 80 meV is optimal in terms of combining high-output-power operation and a good extinction ratio. We then apply the above findings in an InGaAsP-MQW EA modulator that is monolithically integrated with a distributed feedback (DFB) laser, and thus obtain operation with high output power (+1.2 dBm), a high ER (10.5 dB), and a low power penalty (0.4 dB after transmission over 2.6 km of single-mode-fiber). These results confirm the applicability of our EA modulator/DFB laser to VSR applications. After that, we theoretically demonstrate the superiority in terms of ER characteristics of the InGaAlAs-MQW over the conventional InGaAsP-MQW. InGaAlAs-MQW EA modulators are fabricated and demonstrate, for the first time, 40-Gbit/s operation over a wide temperature range (0 to 85).
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.5.951/_p

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@ARTICLE{e88-c_5_951,
author={Hideo ARIMOTO, Jun-ichiro SHIMIZU, Takeshi KITATANI, Kazunori SHINODA, Tomonobu TSUCHIYA, Masataka SHIRAI, Masahiro AOKI, Noriko SASADA, Hiroshi YAMAMOTO, Kazuhiko NAOE, Mitsuo AKASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Compact and Low-Power-Consumption 40-Gbit/s, 1.55-µm Electro-Absorption Modulators},
year={2005},
volume={E88-C},
number={5},
pages={951-959},
abstract={This paper describes 40-Gbit/s operation of 1.55-µm electro-absorption (EA) modulators applicable to compact and low-cost transmitters for very-short-reach (VSR) applications. We start by identifying factors that make a multi-quantum-well (MQW) design suitable for high levels of output power and for uncooled operation. From the basic experimental results, we determine that a valence-band discontinuity ΔE_v at around 80 meV is optimal in terms of combining high-output-power operation and a good extinction ratio. We then apply the above findings in an InGaAsP-MQW EA modulator that is monolithically integrated with a distributed feedback (DFB) laser, and thus obtain operation with high output power (+1.2 dBm), a high ER (10.5 dB), and a low power penalty (0.4 dB after transmission over 2.6 km of single-mode-fiber). These results confirm the applicability of our EA modulator/DFB laser to VSR applications. After that, we theoretically demonstrate the superiority in terms of ER characteristics of the InGaAlAs-MQW over the conventional InGaAsP-MQW. InGaAlAs-MQW EA modulators are fabricated and demonstrate, for the first time, 40-Gbit/s operation over a wide temperature range (0 to 85).},
keywords={},
doi={10.1093/ietele/e88-c.5.951},
ISSN={},
month={May},}

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TY - JOUR
TI - Compact and Low-Power-Consumption 40-Gbit/s, 1.55-µm Electro-Absorption Modulators
T2 - IEICE TRANSACTIONS on Electronics
SP - 951
EP - 959
AU - Hideo ARIMOTO
AU - Jun-ichiro SHIMIZU
AU - Takeshi KITATANI
AU - Kazunori SHINODA
AU - Tomonobu TSUCHIYA
AU - Masataka SHIRAI
AU - Masahiro AOKI
AU - Noriko SASADA
AU - Hiroshi YAMAMOTO
AU - Kazuhiko NAOE
AU - Mitsuo AKASHI
PY - 2005
DO - 10.1093/ietele/e88-c.5.951
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2005
AB - This paper describes 40-Gbit/s operation of 1.55-µm electro-absorption (EA) modulators applicable to compact and low-cost transmitters for very-short-reach (VSR) applications. We start by identifying factors that make a multi-quantum-well (MQW) design suitable for high levels of output power and for uncooled operation. From the basic experimental results, we determine that a valence-band discontinuity ΔE_v at around 80 meV is optimal in terms of combining high-output-power operation and a good extinction ratio. We then apply the above findings in an InGaAsP-MQW EA modulator that is monolithically integrated with a distributed feedback (DFB) laser, and thus obtain operation with high output power (+1.2 dBm), a high ER (10.5 dB), and a low power penalty (0.4 dB after transmission over 2.6 km of single-mode-fiber). These results confirm the applicability of our EA modulator/DFB laser to VSR applications. After that, we theoretically demonstrate the superiority in terms of ER characteristics of the InGaAlAs-MQW over the conventional InGaAsP-MQW. InGaAlAs-MQW EA modulators are fabricated and demonstrate, for the first time, 40-Gbit/s operation over a wide temperature range (0 to 85).
ER -