Fabrication of Silicon Quantum Wires and Dots
Summary :
Fabrication methods of novel silicon quantum wires and dots using anisotropic wet chemical etching and thermal oxidation are newly proposed. The method realizes fine Si quantum wires, which are fully surrounded by the thermal SiO2 without any defects. The wires are straight and the Si/SiO2 interfaces are fairly flat. The 10 nm width wires are confirmed by Transmitting Scanning Microscopy observation in minimum size. The fine quantum dots are also fabricated using this method. The characteristics of the wires are investigated and the current oscillations in variation with the gate voltage are observed in low temperature. We believe the origin of these oscillations arise from one-dimensional subband conduction.
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- IEICE TRANSACTIONS on Electronics Vol.E77-C No.9 pp.1426-1430
- Publication Date
- 1994/09/25
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- Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
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Yoshihiko HIRAI, Kiyoshi MORIMOTO, Masaaki NIWA, Koichiro YUKI, Juro YASUI, "Fabrication of Silicon Quantum Wires and Dots" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 9, pp. 1426-1430, September 1994, doi: .
Abstract: Fabrication methods of novel silicon quantum wires and dots using anisotropic wet chemical etching and thermal oxidation are newly proposed. The method realizes fine Si quantum wires, which are fully surrounded by the thermal SiO2 without any defects. The wires are straight and the Si/SiO2 interfaces are fairly flat. The 10 nm width wires are confirmed by Transmitting Scanning Microscopy observation in minimum size. The fine quantum dots are also fabricated using this method. The characteristics of the wires are investigated and the current oscillations in variation with the gate voltage are observed in low temperature. We believe the origin of these oscillations arise from one-dimensional subband conduction.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_9_1426/_p
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@ARTICLE{e77-c_9_1426,
author={Yoshihiko HIRAI, Kiyoshi MORIMOTO, Masaaki NIWA, Koichiro YUKI, Juro YASUI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication of Silicon Quantum Wires and Dots},
year={1994},
volume={E77-C},
number={9},
pages={1426-1430},
abstract={Fabrication methods of novel silicon quantum wires and dots using anisotropic wet chemical etching and thermal oxidation are newly proposed. The method realizes fine Si quantum wires, which are fully surrounded by the thermal SiO2 without any defects. The wires are straight and the Si/SiO2 interfaces are fairly flat. The 10 nm width wires are confirmed by Transmitting Scanning Microscopy observation in minimum size. The fine quantum dots are also fabricated using this method. The characteristics of the wires are investigated and the current oscillations in variation with the gate voltage are observed in low temperature. We believe the origin of these oscillations arise from one-dimensional subband conduction.},
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - Fabrication of Silicon Quantum Wires and Dots
T2 - IEICE TRANSACTIONS on Electronics
SP - 1426
EP - 1430
AU - Yoshihiko HIRAI
AU - Kiyoshi MORIMOTO
AU - Masaaki NIWA
AU - Koichiro YUKI
AU - Juro YASUI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1994
AB - Fabrication methods of novel silicon quantum wires and dots using anisotropic wet chemical etching and thermal oxidation are newly proposed. The method realizes fine Si quantum wires, which are fully surrounded by the thermal SiO2 without any defects. The wires are straight and the Si/SiO2 interfaces are fairly flat. The 10 nm width wires are confirmed by Transmitting Scanning Microscopy observation in minimum size. The fine quantum dots are also fabricated using this method. The characteristics of the wires are investigated and the current oscillations in variation with the gate voltage are observed in low temperature. We believe the origin of these oscillations arise from one-dimensional subband conduction.
ER -
English
