IEICE TRANSACTIONS on Electronics
Different Characteristics of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer
Summary :
The transistor action with negative differential resistance (NDR) of a nanometer-thick metal (CoSi2)/insulator (CaF2) resonant tunneling transistor is discussed for two transistor structures. These transistors are composed of metal-insulator (M-I) heterostructures with two metallic (CoSi2) quantum wells and three insulator (CaF2) barriers grown on an n-Si (lll) substrate. One of the two structures has the base terminal connected to one of the quantum wells next to the collector, and the other, to one next to the emitter. Although base resistance is high maybe due to the damage caused during the fabrication process, the two transistors show different characteristics, as expected theoretically. Transfer efficiency α (= IC/IE) close to unity was obtained at 77 K for electrons through the resonant levels in M-I heterostructures.
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- IEICE TRANSACTIONS on Electronics Vol.E77-C No.9 pp.1450-1454
- Publication Date
- 1994/09/25
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- Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
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Takashi SUEMASU, Yoshifumi KOHNO, Nobuhiro SUZUKI, Masahiro WATANABE, Masahiro ASADA, "Different Characteristics of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 9, pp. 1450-1454, September 1994, doi: .
Abstract: The transistor action with negative differential resistance (NDR) of a nanometer-thick metal (CoSi2)/insulator (CaF2) resonant tunneling transistor is discussed for two transistor structures. These transistors are composed of metal-insulator (M-I) heterostructures with two metallic (CoSi2) quantum wells and three insulator (CaF2) barriers grown on an n-Si (lll) substrate. One of the two structures has the base terminal connected to one of the quantum wells next to the collector, and the other, to one next to the emitter. Although base resistance is high maybe due to the damage caused during the fabrication process, the two transistors show different characteristics, as expected theoretically. Transfer efficiency α (= IC/IE) close to unity was obtained at 77 K for electrons through the resonant levels in M-I heterostructures.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_9_1450/_p
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@ARTICLE{e77-c_9_1450,
author={Takashi SUEMASU, Yoshifumi KOHNO, Nobuhiro SUZUKI, Masahiro WATANABE, Masahiro ASADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Different Characteristics of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer},
year={1994},
volume={E77-C},
number={9},
pages={1450-1454},
abstract={The transistor action with negative differential resistance (NDR) of a nanometer-thick metal (CoSi2)/insulator (CaF2) resonant tunneling transistor is discussed for two transistor structures. These transistors are composed of metal-insulator (M-I) heterostructures with two metallic (CoSi2) quantum wells and three insulator (CaF2) barriers grown on an n-Si (lll) substrate. One of the two structures has the base terminal connected to one of the quantum wells next to the collector, and the other, to one next to the emitter. Although base resistance is high maybe due to the damage caused during the fabrication process, the two transistors show different characteristics, as expected theoretically. Transfer efficiency α (= IC/IE) close to unity was obtained at 77 K for electrons through the resonant levels in M-I heterostructures.},
keywords={},
doi={},
ISSN={},
month={September},}
Copy
TY - JOUR
TI - Different Characteristics of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 1450
EP - 1454
AU - Takashi SUEMASU
AU - Yoshifumi KOHNO
AU - Nobuhiro SUZUKI
AU - Masahiro WATANABE
AU - Masahiro ASADA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1994
AB - The transistor action with negative differential resistance (NDR) of a nanometer-thick metal (CoSi2)/insulator (CaF2) resonant tunneling transistor is discussed for two transistor structures. These transistors are composed of metal-insulator (M-I) heterostructures with two metallic (CoSi2) quantum wells and three insulator (CaF2) barriers grown on an n-Si (lll) substrate. One of the two structures has the base terminal connected to one of the quantum wells next to the collector, and the other, to one next to the emitter. Although base resistance is high maybe due to the damage caused during the fabrication process, the two transistors show different characteristics, as expected theoretically. Transfer efficiency α (= IC/IE) close to unity was obtained at 77 K for electrons through the resonant levels in M-I heterostructures.
ER -
English
