The Substrate Bias Effect on the Static and Dynamic Characteristics of the Laterall IGBT on the Thin SOI Film
Summary :
The static and dynamic characteristics of the lateral IGBT on the SOI film when the collector voltage of the IGBT is applied to the substrate are invesigated for its application to the high side switch. The measurements on the blocking capability and the switching characteristics under an inductive load are carried out with varying the thickness of the SOI film. The 260 V IGBT can be fabricated on the 5 µm thick SOI film without the special device structure. It is confirmed that the switching speed depends strongly on the SOI film thickness, not on the substrate bias. The dynamic latch-up current during the turn-off transient increases with the decrease in the SOI film thickness. This is caused by the large transient substrate current. This paper exhibits that applying the collector voltage of the IGBT to the substrate makes it possible to improve the characteristics of the IGBT on the thin SOI film.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.9 pp.1464-1471
- Publication Date
- 1994/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
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Hitoshi SUMIDA, Atsuo HIRABAYASHI, "The Substrate Bias Effect on the Static and Dynamic Characteristics of the Laterall IGBT on the Thin SOI Film" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 9, pp. 1464-1471, September 1994, doi: .
Abstract: The static and dynamic characteristics of the lateral IGBT on the SOI film when the collector voltage of the IGBT is applied to the substrate are invesigated for its application to the high side switch. The measurements on the blocking capability and the switching characteristics under an inductive load are carried out with varying the thickness of the SOI film. The 260 V IGBT can be fabricated on the 5 µm thick SOI film without the special device structure. It is confirmed that the switching speed depends strongly on the SOI film thickness, not on the substrate bias. The dynamic latch-up current during the turn-off transient increases with the decrease in the SOI film thickness. This is caused by the large transient substrate current. This paper exhibits that applying the collector voltage of the IGBT to the substrate makes it possible to improve the characteristics of the IGBT on the thin SOI film.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_9_1464/_p
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@ARTICLE{e77-c_9_1464,
author={Hitoshi SUMIDA, Atsuo HIRABAYASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Substrate Bias Effect on the Static and Dynamic Characteristics of the Laterall IGBT on the Thin SOI Film},
year={1994},
volume={E77-C},
number={9},
pages={1464-1471},
abstract={The static and dynamic characteristics of the lateral IGBT on the SOI film when the collector voltage of the IGBT is applied to the substrate are invesigated for its application to the high side switch. The measurements on the blocking capability and the switching characteristics under an inductive load are carried out with varying the thickness of the SOI film. The 260 V IGBT can be fabricated on the 5 µm thick SOI film without the special device structure. It is confirmed that the switching speed depends strongly on the SOI film thickness, not on the substrate bias. The dynamic latch-up current during the turn-off transient increases with the decrease in the SOI film thickness. This is caused by the large transient substrate current. This paper exhibits that applying the collector voltage of the IGBT to the substrate makes it possible to improve the characteristics of the IGBT on the thin SOI film.},
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - The Substrate Bias Effect on the Static and Dynamic Characteristics of the Laterall IGBT on the Thin SOI Film
T2 - IEICE TRANSACTIONS on Electronics
SP - 1464
EP - 1471
AU - Hitoshi SUMIDA
AU - Atsuo HIRABAYASHI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1994
AB - The static and dynamic characteristics of the lateral IGBT on the SOI film when the collector voltage of the IGBT is applied to the substrate are invesigated for its application to the high side switch. The measurements on the blocking capability and the switching characteristics under an inductive load are carried out with varying the thickness of the SOI film. The 260 V IGBT can be fabricated on the 5 µm thick SOI film without the special device structure. It is confirmed that the switching speed depends strongly on the SOI film thickness, not on the substrate bias. The dynamic latch-up current during the turn-off transient increases with the decrease in the SOI film thickness. This is caused by the large transient substrate current. This paper exhibits that applying the collector voltage of the IGBT to the substrate makes it possible to improve the characteristics of the IGBT on the thin SOI film.
ER -
English
