IEICE TRANSACTIONS on Electronics
An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AIGaAs/InGaAs Pseudomorphic HEMT
Summary :
An ultra low noise 50-GHz-Band amplifier (LNA) MMIC has been developed using an AlGaAs/InGaAs pseudomorphic HEMT. A noise figure of 1.8 dB with an associated gain of 8.1 dB is achieved at 50 GHz. The noise figure is less than 2.0 dB from 50 GHz to 52.5 GHz. This is the state-of-the-art noise figure for low noise amplifiers around 50 GHz. The success of this LNA development came from the excellent HEMT and MMIC technologies and the accurate modeling of active and passive elements. Good agreement between measured and simulated data over the band from 40 GHz to 60 GHz is obtained.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E78-C No.3 pp.318-321
- Publication Date
- 1995/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Electromagnetic Theory
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Keyword
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Takuo KASHIWA, Takayuki KATOH, Naohito YOSHIDA, Hiroyuki MINAMI, Toshiaki KITANO, Makio KOMARU, Noriyuki TANINO, "An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AIGaAs/InGaAs Pseudomorphic HEMT" in IEICE TRANSACTIONS on Electronics,
vol. E78-C, no. 3, pp. 318-321, March 1995, doi: .
Abstract: An ultra low noise 50-GHz-Band amplifier (LNA) MMIC has been developed using an AlGaAs/InGaAs pseudomorphic HEMT. A noise figure of 1.8 dB with an associated gain of 8.1 dB is achieved at 50 GHz. The noise figure is less than 2.0 dB from 50 GHz to 52.5 GHz. This is the state-of-the-art noise figure for low noise amplifiers around 50 GHz. The success of this LNA development came from the excellent HEMT and MMIC technologies and the accurate modeling of active and passive elements. Good agreement between measured and simulated data over the band from 40 GHz to 60 GHz is obtained.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_3_318/_p
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@ARTICLE{e78-c_3_318,
author={Takuo KASHIWA, Takayuki KATOH, Naohito YOSHIDA, Hiroyuki MINAMI, Toshiaki KITANO, Makio KOMARU, Noriyuki TANINO, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AIGaAs/InGaAs Pseudomorphic HEMT},
year={1995},
volume={E78-C},
number={3},
pages={318-321},
abstract={An ultra low noise 50-GHz-Band amplifier (LNA) MMIC has been developed using an AlGaAs/InGaAs pseudomorphic HEMT. A noise figure of 1.8 dB with an associated gain of 8.1 dB is achieved at 50 GHz. The noise figure is less than 2.0 dB from 50 GHz to 52.5 GHz. This is the state-of-the-art noise figure for low noise amplifiers around 50 GHz. The success of this LNA development came from the excellent HEMT and MMIC technologies and the accurate modeling of active and passive elements. Good agreement between measured and simulated data over the band from 40 GHz to 60 GHz is obtained.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AIGaAs/InGaAs Pseudomorphic HEMT
T2 - IEICE TRANSACTIONS on Electronics
SP - 318
EP - 321
AU - Takuo KASHIWA
AU - Takayuki KATOH
AU - Naohito YOSHIDA
AU - Hiroyuki MINAMI
AU - Toshiaki KITANO
AU - Makio KOMARU
AU - Noriyuki TANINO
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1995
AB - An ultra low noise 50-GHz-Band amplifier (LNA) MMIC has been developed using an AlGaAs/InGaAs pseudomorphic HEMT. A noise figure of 1.8 dB with an associated gain of 8.1 dB is achieved at 50 GHz. The noise figure is less than 2.0 dB from 50 GHz to 52.5 GHz. This is the state-of-the-art noise figure for low noise amplifiers around 50 GHz. The success of this LNA development came from the excellent HEMT and MMIC technologies and the accurate modeling of active and passive elements. Good agreement between measured and simulated data over the band from 40 GHz to 60 GHz is obtained.
ER -
English
