GaInAsP/InP Square Buried-Heterostructure Surface-Emitting Lasers Regrown by MOCVD

Seiji UCHIYAMA; Susumu KASHIWA

GaInAsP/InP Square Buried-Heterostructure Surface-Emitting Lasers Regrown by MOCVD

Seiji UCHIYAMA, Susumu KASHIWA

Full Text Views

0

Cite this

Summary :

Mesa structures have been investigated to optimize a buried-heterostructure (BH) for a GaInAsP/InP surface-emitting (SE) laser regrown by metalorganic chemical vapor deposition (MOCVD), and it has been found that a square mesa top pattern of which the sides are at an angle of 45 to the 011 orientation is suitable. A 1.3-µm GaInAsP/InP square buried heterostructure (SBH) SE laser with this mesa structure has been demonstrated and low-threshold CW oscillation (threshold current I_th=0.45 mA) at 77 K and low-threshold room-temperature pulsed oscillation (I_th=12 mA) have been obtained.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.9 pp.1311-1314

Publication Date: 1995/09/25

Publicized

Online ISSN

DOI

Type of Manuscript: LETTER

Category: Opto-Electronics

Cite this

Copy

Seiji UCHIYAMA, Susumu KASHIWA, "GaInAsP/InP Square Buried-Heterostructure Surface-Emitting Lasers Regrown by MOCVD" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 9, pp. 1311-1314, September 1995, doi: .
Abstract: Mesa structures have been investigated to optimize a buried-heterostructure (BH) for a GaInAsP/InP surface-emitting (SE) laser regrown by metalorganic chemical vapor deposition (MOCVD), and it has been found that a square mesa top pattern of which the sides are at an angle of 45 to the 011 orientation is suitable. A 1.3-µm GaInAsP/InP square buried heterostructure (SBH) SE laser with this mesa structure has been demonstrated and low-threshold CW oscillation (threshold current I_th=0.45 mA) at 77 K and low-threshold room-temperature pulsed oscillation (I_th=12 mA) have been obtained.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_9_1311/_p

Copy

@ARTICLE{e78-c_9_1311,
author={Seiji UCHIYAMA, Susumu KASHIWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={GaInAsP/InP Square Buried-Heterostructure Surface-Emitting Lasers Regrown by MOCVD},
year={1995},
volume={E78-C},
number={9},
pages={1311-1314},
abstract={Mesa structures have been investigated to optimize a buried-heterostructure (BH) for a GaInAsP/InP surface-emitting (SE) laser regrown by metalorganic chemical vapor deposition (MOCVD), and it has been found that a square mesa top pattern of which the sides are at an angle of 45 to the 011 orientation is suitable. A 1.3-µm GaInAsP/InP square buried heterostructure (SBH) SE laser with this mesa structure has been demonstrated and low-threshold CW oscillation (threshold current I_th=0.45 mA) at 77 K and low-threshold room-temperature pulsed oscillation (I_th=12 mA) have been obtained.},
keywords={},
doi={},
ISSN={},
month={September},}

Copy

TY - JOUR
TI - GaInAsP/InP Square Buried-Heterostructure Surface-Emitting Lasers Regrown by MOCVD
T2 - IEICE TRANSACTIONS on Electronics
SP - 1311
EP - 1314
AU - Seiji UCHIYAMA
AU - Susumu KASHIWA
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1995
AB - Mesa structures have been investigated to optimize a buried-heterostructure (BH) for a GaInAsP/InP surface-emitting (SE) laser regrown by metalorganic chemical vapor deposition (MOCVD), and it has been found that a square mesa top pattern of which the sides are at an angle of 45 to the 011 orientation is suitable. A 1.3-µm GaInAsP/InP square buried heterostructure (SBH) SE laser with this mesa structure has been demonstrated and low-threshold CW oscillation (threshold current I_th=0.45 mA) at 77 K and low-threshold room-temperature pulsed oscillation (I_th=12 mA) have been obtained.
ER -