The Long-Term Charge Storage Mechanism of Silicon Dioxide Electrets for Microsystems

Mitsuo ICHIYA; Takuro NAKAMURA; Shuji NAKATA; Jacques LEWINER

The Long-Term Charge Storage Mechanism of Silicon Dioxide Electrets for Microsystems

Mitsuo ICHIYA, Takuro NAKAMURA, Shuji NAKATA, Jacques LEWINER

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In order to improve the sensitivity of micromachined sensors applied with electrostatic fields and increase their actuated force of electrostatic micromachined actuators, "electrets," which are dielectrics carrying non equilibrium permanent space charges of polarization distribution, are very important. In this paper, positively corona charged silicon dioxide electrets, which are deposited by Plasma Chemical Vapor Deposition (PCVD) and thermally oxidized, are investigated. Physical studies will be described, in which the charge stability is correlated to Thermally Stimulated Current (TSC) measurements and to Electron Spin Resonance (ESR) analysis. Some intrinsic differences have been observed between materials. The electrets with superior long-term charge stability contain 10,000 times as much E' center (Si₃ as the ones with inferior long-term charge stability. Finally, some investigations on the long-term charge storage mechanism of the positively charged silicon dioxide electret will be described.

Publication: IEICE TRANSACTIONS on Electronics Vol.E79-C No.10 pp.1462-1466

Publication Date: 1996/10/25

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Type of Manuscript: PAPER

Category: Materials

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Mitsuo ICHIYA, Takuro NAKAMURA, Shuji NAKATA, Jacques LEWINER, "The Long-Term Charge Storage Mechanism of Silicon Dioxide Electrets for Microsystems" in IEICE TRANSACTIONS on Electronics, vol. E79-C, no. 10, pp. 1462-1466, October 1996, doi: .
Abstract: In order to improve the sensitivity of micromachined sensors applied with electrostatic fields and increase their actuated force of electrostatic micromachined actuators, "electrets," which are dielectrics carrying non equilibrium permanent space charges of polarization distribution, are very important. In this paper, positively corona charged silicon dioxide electrets, which are deposited by Plasma Chemical Vapor Deposition (PCVD) and thermally oxidized, are investigated. Physical studies will be described, in which the charge stability is correlated to Thermally Stimulated Current (TSC) measurements and to Electron Spin Resonance (ESR) analysis. Some intrinsic differences have been observed between materials. The electrets with superior long-term charge stability contain 10,000 times as much E' center (Si₃ as the ones with inferior long-term charge stability. Finally, some investigations on the long-term charge storage mechanism of the positively charged silicon dioxide electret will be described.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_10_1462/_p

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@ARTICLE{e79-c_10_1462,
author={Mitsuo ICHIYA, Takuro NAKAMURA, Shuji NAKATA, Jacques LEWINER, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Long-Term Charge Storage Mechanism of Silicon Dioxide Electrets for Microsystems},
year={1996},
volume={E79-C},
number={10},
pages={1462-1466},
abstract={In order to improve the sensitivity of micromachined sensors applied with electrostatic fields and increase their actuated force of electrostatic micromachined actuators, "electrets," which are dielectrics carrying non equilibrium permanent space charges of polarization distribution, are very important. In this paper, positively corona charged silicon dioxide electrets, which are deposited by Plasma Chemical Vapor Deposition (PCVD) and thermally oxidized, are investigated. Physical studies will be described, in which the charge stability is correlated to Thermally Stimulated Current (TSC) measurements and to Electron Spin Resonance (ESR) analysis. Some intrinsic differences have been observed between materials. The electrets with superior long-term charge stability contain 10,000 times as much E' center (Si₃ as the ones with inferior long-term charge stability. Finally, some investigations on the long-term charge storage mechanism of the positively charged silicon dioxide electret will be described.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - The Long-Term Charge Storage Mechanism of Silicon Dioxide Electrets for Microsystems
T2 - IEICE TRANSACTIONS on Electronics
SP - 1462
EP - 1466
AU - Mitsuo ICHIYA
AU - Takuro NAKAMURA
AU - Shuji NAKATA
AU - Jacques LEWINER
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1996
AB - In order to improve the sensitivity of micromachined sensors applied with electrostatic fields and increase their actuated force of electrostatic micromachined actuators, "electrets," which are dielectrics carrying non equilibrium permanent space charges of polarization distribution, are very important. In this paper, positively corona charged silicon dioxide electrets, which are deposited by Plasma Chemical Vapor Deposition (PCVD) and thermally oxidized, are investigated. Physical studies will be described, in which the charge stability is correlated to Thermally Stimulated Current (TSC) measurements and to Electron Spin Resonance (ESR) analysis. Some intrinsic differences have been observed between materials. The electrets with superior long-term charge stability contain 10,000 times as much E' center (Si₃ as the ones with inferior long-term charge stability. Finally, some investigations on the long-term charge storage mechanism of the positively charged silicon dioxide electret will be described.
ER -