The physical origin of stress-induced leakage currents (SILC) in ultra-thin SiO2 films is described. Assuming a two-step trap-assisted tunneling process accompanied with an energy relaxation process of trapped electrons, conditions of trap sites which are origin of SICL are quantitatively found. It is proposed that the trap site location and the trap state energy can be explained by a mean-free-path of hole in SiO2 films and an atomic structure of the trap site by the O vacancy model.

A first-order investigation of the transport and energy-loss processes in silicon dioxide is worked out in the frame of the Spherical-Harmonics solution of the Boltzmann Transport Equation. The SiO2 conduction band is treated as a single-valley spherical and parabolic band. The relevant scattering mechanisms are modeled consistently: both the polar and nonpolar electron-phonon scattering mechanisms are considered. The scattering rates for each contribution are analyzed in comparison with Monte Carlo data. A number of macroscopic transport properties of electrons in SiO2 are worked out in the steady-state regime for a homogeneous bulk structure. The investigation shows a good agreement in comparison with experiments in the low-field regime and for different temperatures.

Micromachined sensors and actuators applied with electrostatic fields are getting widely developed. At the same time, "electrets," which are dielectrics carrying non-equilibrium permanent space charges or polarization distribution, are in demand because they improve the transducer characteristics. In this paper, we have reported on our successful fabrication of silicon dioxide electrets with extremely superior long-term charge stability by plasma chemical vapor deposition (PCVD). We have also reported on the correlation between the deposition conditions, the long-term charge stability and thermally stimulated current (TSC). Finally, the characterization of the long-term stable electrets will be described and discussed.

In order to improve the sensitivity of micromachined sensors applied with electrostatic fields and increase their actuated force of electrostatic micromachined actuators, "electrets," which are dielectrics carrying non equilibrium permanent space charges of polarization distribution, are very important. In this paper, positively corona charged silicon dioxide electrets, which are deposited by Plasma Chemical Vapor Deposition (PCVD) and thermally oxidized, are investigated. Physical studies will be described, in which the charge stability is correlated to Thermally Stimulated Current (TSC) measurements and to Electron Spin Resonance (ESR) analysis. Some intrinsic differences have been observed between materials. The electrets with superior long-term charge stability contain 10,000 times as much E' center (Si3 as the ones with inferior long-term charge stability. Finally, some investigations on the long-term charge storage mechanism of the positively charged silicon dioxide electret will be described.

In this paper, an electrostatic actuator with electret is proposed. Electrets are the electrical equivalent of magnets. They are dielectric's carrying a non equilibrium permanent space charge or polarization distribution. This distribution can create either an external electric field or internal properties such as piezo or pyroelectricity. In the first case it is possible to make new types of electrostatic actuators by the external electric field. An electrostatic relay with electret is fabricated to demonstrate the possibility of an electrostatic actuator with electret. The size of relay is 5.2 mm11.5 mm. Its amature beam is 50 µm thick, 2.9 mm wide, 6.3 mm long, and acts as a moving electrode. Facing it, the stationary electrode is 20 µm away from the moving electrode. On the stationary electrode, new type of electret made from SiO2 is deposited. We have succeeded in making the armature operate at low applied voltage 20 V. On the same structure without electret, we need more than 120 V to make the same armature operation. We have also succeeded in making the armature latching.

The dielectric breakdown strength of thermally grown silicon dioxide films was studied for MOS capacitors fabricated on silicon wafers that were intentionally contaminated with magnesium and zinc. Most of magnesium was detected in the oxide film after oxidation. Zinc, some of which evaporated from the surface of wafers, was detected only in the oxide film. The mechanism of the dielectric degradation is dominated by formation of metal silicates, such as Mg2SiO4 (Forsterite) and Zn2SiO4 (Wilemite). The formation of metal silicates has no influence on the generation lifetime of minority carriers, however, it provides the flat-band voltage shift less than 0.3 eV, and forces to increase the density of deep surface states with the zinc contamination.