Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors
Summary :
The dielectric breakdown strength of thermally grown silicon dioxide films was studied for MOS capacitors fabricated on silicon wafers that were intentionally contaminated with magnesium and zinc. Most of magnesium was detected in the oxide film after oxidation. Zinc, some of which evaporated from the surface of wafers, was detected only in the oxide film. The mechanism of the dielectric degradation is dominated by formation of metal silicates, such as Mg2SiO4 (Forsterite) and Zn2SiO4 (Wilemite). The formation of metal silicates has no influence on the generation lifetime of minority carriers, however, it provides the flat-band voltage shift less than 0.3 eV, and forces to increase the density of deep surface states with the zinc contamination.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.3 pp.464-472
- Publication Date
- 1994/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
- Category
- Process Technology
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Makoto TAKIYAMA, Susumu OHTSUKA, Tadashi SAKON, Masaharu TACHIMORI, "Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 3, pp. 464-472, March 1994, doi: .
Abstract: The dielectric breakdown strength of thermally grown silicon dioxide films was studied for MOS capacitors fabricated on silicon wafers that were intentionally contaminated with magnesium and zinc. Most of magnesium was detected in the oxide film after oxidation. Zinc, some of which evaporated from the surface of wafers, was detected only in the oxide film. The mechanism of the dielectric degradation is dominated by formation of metal silicates, such as Mg2SiO4 (Forsterite) and Zn2SiO4 (Wilemite). The formation of metal silicates has no influence on the generation lifetime of minority carriers, however, it provides the flat-band voltage shift less than 0.3 eV, and forces to increase the density of deep surface states with the zinc contamination.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_3_464/_p
Copy
@ARTICLE{e77-c_3_464,
author={Makoto TAKIYAMA, Susumu OHTSUKA, Tadashi SAKON, Masaharu TACHIMORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors},
year={1994},
volume={E77-C},
number={3},
pages={464-472},
abstract={The dielectric breakdown strength of thermally grown silicon dioxide films was studied for MOS capacitors fabricated on silicon wafers that were intentionally contaminated with magnesium and zinc. Most of magnesium was detected in the oxide film after oxidation. Zinc, some of which evaporated from the surface of wafers, was detected only in the oxide film. The mechanism of the dielectric degradation is dominated by formation of metal silicates, such as Mg2SiO4 (Forsterite) and Zn2SiO4 (Wilemite). The formation of metal silicates has no influence on the generation lifetime of minority carriers, however, it provides the flat-band voltage shift less than 0.3 eV, and forces to increase the density of deep surface states with the zinc contamination.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors
T2 - IEICE TRANSACTIONS on Electronics
SP - 464
EP - 472
AU - Makoto TAKIYAMA
AU - Susumu OHTSUKA
AU - Tadashi SAKON
AU - Masaharu TACHIMORI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1994
AB - The dielectric breakdown strength of thermally grown silicon dioxide films was studied for MOS capacitors fabricated on silicon wafers that were intentionally contaminated with magnesium and zinc. Most of magnesium was detected in the oxide film after oxidation. Zinc, some of which evaporated from the surface of wafers, was detected only in the oxide film. The mechanism of the dielectric degradation is dominated by formation of metal silicates, such as Mg2SiO4 (Forsterite) and Zn2SiO4 (Wilemite). The formation of metal silicates has no influence on the generation lifetime of minority carriers, however, it provides the flat-band voltage shift less than 0.3 eV, and forces to increase the density of deep surface states with the zinc contamination.
ER -
English
