IEICE TRANSACTIONS on Electronics
Proposal and Analysis of a Three-Terminal Photon-Assisted Tunneling Device Operating in the Terahertz Frequency Range
Summary :
A three-terminal quantum device utilizing photon-assisted tunneling in a multilayer structure is proposed and analyzed in terms of its high frequency amplification characteristics. The operation principle of this device includes photonassisted tunneling at the input, formation of a propagating charge wave due to the beat of tunneling electrons and its acceleration, and radiation of electromagnetic waves at the output. Analysis of these operations, discussion of similarities and dissimilarities to classical klystrons, and estimation of the power gain and its frequency dependence are given. A simple example demonstrates that amplification up to the terahertz frequency range is possible using this device.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.11 pp.1537-1542
- Publication Date
- 1996/11/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
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Masahiro ASADA, "Proposal and Analysis of a Three-Terminal Photon-Assisted Tunneling Device Operating in the Terahertz Frequency Range" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 11, pp. 1537-1542, November 1996, doi: .
Abstract: A three-terminal quantum device utilizing photon-assisted tunneling in a multilayer structure is proposed and analyzed in terms of its high frequency amplification characteristics. The operation principle of this device includes photonassisted tunneling at the input, formation of a propagating charge wave due to the beat of tunneling electrons and its acceleration, and radiation of electromagnetic waves at the output. Analysis of these operations, discussion of similarities and dissimilarities to classical klystrons, and estimation of the power gain and its frequency dependence are given. A simple example demonstrates that amplification up to the terahertz frequency range is possible using this device.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_11_1537/_p
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@ARTICLE{e79-c_11_1537,
author={Masahiro ASADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Proposal and Analysis of a Three-Terminal Photon-Assisted Tunneling Device Operating in the Terahertz Frequency Range},
year={1996},
volume={E79-C},
number={11},
pages={1537-1542},
abstract={A three-terminal quantum device utilizing photon-assisted tunneling in a multilayer structure is proposed and analyzed in terms of its high frequency amplification characteristics. The operation principle of this device includes photonassisted tunneling at the input, formation of a propagating charge wave due to the beat of tunneling electrons and its acceleration, and radiation of electromagnetic waves at the output. Analysis of these operations, discussion of similarities and dissimilarities to classical klystrons, and estimation of the power gain and its frequency dependence are given. A simple example demonstrates that amplification up to the terahertz frequency range is possible using this device.},
keywords={},
doi={},
ISSN={},
month={November},}
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TY - JOUR
TI - Proposal and Analysis of a Three-Terminal Photon-Assisted Tunneling Device Operating in the Terahertz Frequency Range
T2 - IEICE TRANSACTIONS on Electronics
SP - 1537
EP - 1542
AU - Masahiro ASADA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1996
AB - A three-terminal quantum device utilizing photon-assisted tunneling in a multilayer structure is proposed and analyzed in terms of its high frequency amplification characteristics. The operation principle of this device includes photonassisted tunneling at the input, formation of a propagating charge wave due to the beat of tunneling electrons and its acceleration, and radiation of electromagnetic waves at the output. Analysis of these operations, discussion of similarities and dissimilarities to classical klystrons, and estimation of the power gain and its frequency dependence are given. A simple example demonstrates that amplification up to the terahertz frequency range is possible using this device.
ER -
English
