IEICE TRANSACTIONS on Electronics
Photoluminescence Characteristics of GaAs Nanowhis-kers: Effects of Depletion Potential
Summary :
Photoluminescence characterization with a surface treatment suggests that a reduction in the radiative recombination rate of GaAs nanowhiskers is caused by charge separation in depletion potential. Good agreement is obtained between photoluminescence characteristics and calculations based on self-consistent wavefunctions confined in the depletion potential. The radiative life time of 200-nm GaAs nanowhiskers at 77 K is estimated as short as 0.5 ns if the depletion potential is completely eliminated. Weak size dependence of photoluminescence spectra at 6 K is explained as a sign of band-gap reduction induced by the depletion potential.
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- IEICE TRANSACTIONS on Electronics Vol.E79-C No.11 pp.1573-1578
- Publication Date
- 1996/11/25
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- Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
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Kensuke OGAWA, Kenji HIRUMA, Toshio KATSUYAMA, "Photoluminescence Characteristics of GaAs Nanowhis-kers: Effects of Depletion Potential" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 11, pp. 1573-1578, November 1996, doi: .
Abstract: Photoluminescence characterization with a surface treatment suggests that a reduction in the radiative recombination rate of GaAs nanowhiskers is caused by charge separation in depletion potential. Good agreement is obtained between photoluminescence characteristics and calculations based on self-consistent wavefunctions confined in the depletion potential. The radiative life time of 200-nm GaAs nanowhiskers at 77 K is estimated as short as 0.5 ns if the depletion potential is completely eliminated. Weak size dependence of photoluminescence spectra at 6 K is explained as a sign of band-gap reduction induced by the depletion potential.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_11_1573/_p
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@ARTICLE{e79-c_11_1573,
author={Kensuke OGAWA, Kenji HIRUMA, Toshio KATSUYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Photoluminescence Characteristics of GaAs Nanowhis-kers: Effects of Depletion Potential},
year={1996},
volume={E79-C},
number={11},
pages={1573-1578},
abstract={Photoluminescence characterization with a surface treatment suggests that a reduction in the radiative recombination rate of GaAs nanowhiskers is caused by charge separation in depletion potential. Good agreement is obtained between photoluminescence characteristics and calculations based on self-consistent wavefunctions confined in the depletion potential. The radiative life time of 200-nm GaAs nanowhiskers at 77 K is estimated as short as 0.5 ns if the depletion potential is completely eliminated. Weak size dependence of photoluminescence spectra at 6 K is explained as a sign of band-gap reduction induced by the depletion potential.},
keywords={},
doi={},
ISSN={},
month={November},}
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TY - JOUR
TI - Photoluminescence Characteristics of GaAs Nanowhis-kers: Effects of Depletion Potential
T2 - IEICE TRANSACTIONS on Electronics
SP - 1573
EP - 1578
AU - Kensuke OGAWA
AU - Kenji HIRUMA
AU - Toshio KATSUYAMA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1996
AB - Photoluminescence characterization with a surface treatment suggests that a reduction in the radiative recombination rate of GaAs nanowhiskers is caused by charge separation in depletion potential. Good agreement is obtained between photoluminescence characteristics and calculations based on self-consistent wavefunctions confined in the depletion potential. The radiative life time of 200-nm GaAs nanowhiskers at 77 K is estimated as short as 0.5 ns if the depletion potential is completely eliminated. Weak size dependence of photoluminescence spectra at 6 K is explained as a sign of band-gap reduction induced by the depletion potential.
ER -
English
