Modeling of Leak Current Characteristics in High Frequency Operation of CMOS Circuits Fabricated on SOI Substrate
Summary :
Threshold voltage shift in high frequency operation of 0.3µm and 0.35µm gate SOI CMOS is experimentally studied, using supply current measurement of inverter chains as test structures. The threshold voltage shift is obtained from the measurement of the leak currents in DC and high frequency condition. For a large supply voltage the electron-hole generation current becomes dominant, resulting in lowered threshold voltage, while the threshold voltage becomes higher than DC case for a low supply voltage. A reasonable relation of the threshold voltage shift and average electric field in the channel is obtained in this study. This method will be useful as a measure of "substrate current" for floating body SOI CMOS.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.2 pp.185-191
- Publication Date
- 1996/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Microelectronic Test Structures)
- Category
- SOI & Material Characterization
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Hiroshi ITO, Kunihiro ASADA, "Modeling of Leak Current Characteristics in High Frequency Operation of CMOS Circuits Fabricated on SOI Substrate" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 2, pp. 185-191, February 1996, doi: .
Abstract: Threshold voltage shift in high frequency operation of 0.3µm and 0.35µm gate SOI CMOS is experimentally studied, using supply current measurement of inverter chains as test structures. The threshold voltage shift is obtained from the measurement of the leak currents in DC and high frequency condition. For a large supply voltage the electron-hole generation current becomes dominant, resulting in lowered threshold voltage, while the threshold voltage becomes higher than DC case for a low supply voltage. A reasonable relation of the threshold voltage shift and average electric field in the channel is obtained in this study. This method will be useful as a measure of "substrate current" for floating body SOI CMOS.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_2_185/_p
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@ARTICLE{e79-c_2_185,
author={Hiroshi ITO, Kunihiro ASADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Modeling of Leak Current Characteristics in High Frequency Operation of CMOS Circuits Fabricated on SOI Substrate},
year={1996},
volume={E79-C},
number={2},
pages={185-191},
abstract={Threshold voltage shift in high frequency operation of 0.3µm and 0.35µm gate SOI CMOS is experimentally studied, using supply current measurement of inverter chains as test structures. The threshold voltage shift is obtained from the measurement of the leak currents in DC and high frequency condition. For a large supply voltage the electron-hole generation current becomes dominant, resulting in lowered threshold voltage, while the threshold voltage becomes higher than DC case for a low supply voltage. A reasonable relation of the threshold voltage shift and average electric field in the channel is obtained in this study. This method will be useful as a measure of "substrate current" for floating body SOI CMOS.},
keywords={},
doi={},
ISSN={},
month={February},}
Copy
TY - JOUR
TI - Modeling of Leak Current Characteristics in High Frequency Operation of CMOS Circuits Fabricated on SOI Substrate
T2 - IEICE TRANSACTIONS on Electronics
SP - 185
EP - 191
AU - Hiroshi ITO
AU - Kunihiro ASADA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1996
AB - Threshold voltage shift in high frequency operation of 0.3µm and 0.35µm gate SOI CMOS is experimentally studied, using supply current measurement of inverter chains as test structures. The threshold voltage shift is obtained from the measurement of the leak currents in DC and high frequency condition. For a large supply voltage the electron-hole generation current becomes dominant, resulting in lowered threshold voltage, while the threshold voltage becomes higher than DC case for a low supply voltage. A reasonable relation of the threshold voltage shift and average electric field in the channel is obtained in this study. This method will be useful as a measure of "substrate current" for floating body SOI CMOS.
ER -
English
