A tunnel film(9 nm thick) formed by a rapid thermal oxidation in dry oxygen-rapid thermal nitridation in NH3-rapid thermal oxynitridation in N2O (ONN) sequence is applied to a stacked-gate flash memory cell, in which writing and erasing are carried out by Fowler-Nordheim tunneling at a drain and at a channel, respectively. The writing, erasing, endurance, disturbance and retention characteristics of the memory cells with ONN tunnel films are, for the first time, compared to those of the memory cells with conventional tunnel films such as dry oxide, N2O-oxynitride and reoxidized nitrided oxide tunnel films. No significant difference of the writing and erasing characteristics was observed among the memory cells with the various tunnel films. However, the amount of Vth window narrowing in the endurance characteristics of the memory cells with ONN (-12.9%) and reoxidized nitrided oxide(-11.4%) tunnel films were much smaller than those of the memory cells with RTO(-34.0%) and NO (-38.2%) after 106 write/erase cycles. Furthermore, the decrease in Vth in the drain disturbance characteristics of the memory cells with ONN tunnel films (21.2%) after weak electron-ejecting stress of 105 cycles was smaller than those of the memory cells with the other films(51.4-64.4%). The retention characteristics of the memory cells with ONN tunnel films under the thermal stress of 200
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Tomiyuki ARAKAWA, Ryoichi MATSUMOTO, Takahisa HAYASHI, "Tunnel Oxynitride Film Formation for Highly Reliable Flash Memory" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 6, pp. 819-824, June 1996, doi: .
Abstract: A tunnel film(9 nm thick) formed by a rapid thermal oxidation in dry oxygen-rapid thermal nitridation in NH3-rapid thermal oxynitridation in N2O (ONN) sequence is applied to a stacked-gate flash memory cell, in which writing and erasing are carried out by Fowler-Nordheim tunneling at a drain and at a channel, respectively. The writing, erasing, endurance, disturbance and retention characteristics of the memory cells with ONN tunnel films are, for the first time, compared to those of the memory cells with conventional tunnel films such as dry oxide, N2O-oxynitride and reoxidized nitrided oxide tunnel films. No significant difference of the writing and erasing characteristics was observed among the memory cells with the various tunnel films. However, the amount of Vth window narrowing in the endurance characteristics of the memory cells with ONN (-12.9%) and reoxidized nitrided oxide(-11.4%) tunnel films were much smaller than those of the memory cells with RTO(-34.0%) and NO (-38.2%) after 106 write/erase cycles. Furthermore, the decrease in Vth in the drain disturbance characteristics of the memory cells with ONN tunnel films (21.2%) after weak electron-ejecting stress of 105 cycles was smaller than those of the memory cells with the other films(51.4-64.4%). The retention characteristics of the memory cells with ONN tunnel films under the thermal stress of 200
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_6_819/_p
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@ARTICLE{e79-c_6_819,
author={Tomiyuki ARAKAWA, Ryoichi MATSUMOTO, Takahisa HAYASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Tunnel Oxynitride Film Formation for Highly Reliable Flash Memory},
year={1996},
volume={E79-C},
number={6},
pages={819-824},
abstract={A tunnel film(9 nm thick) formed by a rapid thermal oxidation in dry oxygen-rapid thermal nitridation in NH3-rapid thermal oxynitridation in N2O (ONN) sequence is applied to a stacked-gate flash memory cell, in which writing and erasing are carried out by Fowler-Nordheim tunneling at a drain and at a channel, respectively. The writing, erasing, endurance, disturbance and retention characteristics of the memory cells with ONN tunnel films are, for the first time, compared to those of the memory cells with conventional tunnel films such as dry oxide, N2O-oxynitride and reoxidized nitrided oxide tunnel films. No significant difference of the writing and erasing characteristics was observed among the memory cells with the various tunnel films. However, the amount of Vth window narrowing in the endurance characteristics of the memory cells with ONN (-12.9%) and reoxidized nitrided oxide(-11.4%) tunnel films were much smaller than those of the memory cells with RTO(-34.0%) and NO (-38.2%) after 106 write/erase cycles. Furthermore, the decrease in Vth in the drain disturbance characteristics of the memory cells with ONN tunnel films (21.2%) after weak electron-ejecting stress of 105 cycles was smaller than those of the memory cells with the other films(51.4-64.4%). The retention characteristics of the memory cells with ONN tunnel films under the thermal stress of 200
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Tunnel Oxynitride Film Formation for Highly Reliable Flash Memory
T2 - IEICE TRANSACTIONS on Electronics
SP - 819
EP - 824
AU - Tomiyuki ARAKAWA
AU - Ryoichi MATSUMOTO
AU - Takahisa HAYASHI
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1996
AB - A tunnel film(9 nm thick) formed by a rapid thermal oxidation in dry oxygen-rapid thermal nitridation in NH3-rapid thermal oxynitridation in N2O (ONN) sequence is applied to a stacked-gate flash memory cell, in which writing and erasing are carried out by Fowler-Nordheim tunneling at a drain and at a channel, respectively. The writing, erasing, endurance, disturbance and retention characteristics of the memory cells with ONN tunnel films are, for the first time, compared to those of the memory cells with conventional tunnel films such as dry oxide, N2O-oxynitride and reoxidized nitrided oxide tunnel films. No significant difference of the writing and erasing characteristics was observed among the memory cells with the various tunnel films. However, the amount of Vth window narrowing in the endurance characteristics of the memory cells with ONN (-12.9%) and reoxidized nitrided oxide(-11.4%) tunnel films were much smaller than those of the memory cells with RTO(-34.0%) and NO (-38.2%) after 106 write/erase cycles. Furthermore, the decrease in Vth in the drain disturbance characteristics of the memory cells with ONN tunnel films (21.2%) after weak electron-ejecting stress of 105 cycles was smaller than those of the memory cells with the other films(51.4-64.4%). The retention characteristics of the memory cells with ONN tunnel films under the thermal stress of 200
ER -