New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films

Tetsuo ENDOH; Kazuyosi SHIMIZU; Hirohisa IIZUKA; Fujio MASUOKA

New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films

Tetsuo ENDOH, Kazuyosi SHIMIZU, Hirohisa IIZUKA, Fujio MASUOKA

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This paper describes a new reduction mechanism of the stress induced leakage current that is induced by step tunneling of electrons through the step tunneling sites. The concept of this mechanism is based on the deactivation of step tunneling sites for thin oxide. It is verified that the deactivation is electrically realized by the injected electrons int the sites. It is because the step tunneling probability of electrons though the deactivated sites is suppressed, since the electron capture cross section of the neutralized deactivation sites becomes extremely low. The deactivation scheme is as follows: (1) The deactivation of tunneling sites can be realized that the tunneling sites trapped holes change to neutralized tunneling sites due to electrons injection. (2) The injected electron can deactivate the activation tunneling sites only under energy level than the energy level of the injected electrons. It is shown that the above reduction phenomenon can be quantifiably with formulation. These results are very important for high reliable thin oxide films and for high performance ULSI.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.10 pp.1310-1316

Publication Date: 1997/10/25

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Category: Integrated Electronics

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Tetsuo ENDOH, Kazuyosi SHIMIZU, Hirohisa IIZUKA, Fujio MASUOKA, "New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 10, pp. 1310-1316, October 1997, doi: .
Abstract: This paper describes a new reduction mechanism of the stress induced leakage current that is induced by step tunneling of electrons through the step tunneling sites. The concept of this mechanism is based on the deactivation of step tunneling sites for thin oxide. It is verified that the deactivation is electrically realized by the injected electrons int the sites. It is because the step tunneling probability of electrons though the deactivated sites is suppressed, since the electron capture cross section of the neutralized deactivation sites becomes extremely low. The deactivation scheme is as follows: (1) The deactivation of tunneling sites can be realized that the tunneling sites trapped holes change to neutralized tunneling sites due to electrons injection. (2) The injected electron can deactivate the activation tunneling sites only under energy level than the energy level of the injected electrons. It is shown that the above reduction phenomenon can be quantifiably with formulation. These results are very important for high reliable thin oxide films and for high performance ULSI.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_10_1310/_p

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@ARTICLE{e80-c_10_1310,
author={Tetsuo ENDOH, Kazuyosi SHIMIZU, Hirohisa IIZUKA, Fujio MASUOKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films},
year={1997},
volume={E80-C},
number={10},
pages={1310-1316},
abstract={This paper describes a new reduction mechanism of the stress induced leakage current that is induced by step tunneling of electrons through the step tunneling sites. The concept of this mechanism is based on the deactivation of step tunneling sites for thin oxide. It is verified that the deactivation is electrically realized by the injected electrons int the sites. It is because the step tunneling probability of electrons though the deactivated sites is suppressed, since the electron capture cross section of the neutralized deactivation sites becomes extremely low. The deactivation scheme is as follows: (1) The deactivation of tunneling sites can be realized that the tunneling sites trapped holes change to neutralized tunneling sites due to electrons injection. (2) The injected electron can deactivate the activation tunneling sites only under energy level than the energy level of the injected electrons. It is shown that the above reduction phenomenon can be quantifiably with formulation. These results are very important for high reliable thin oxide films and for high performance ULSI.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 1310
EP - 1316
AU - Tetsuo ENDOH
AU - Kazuyosi SHIMIZU
AU - Hirohisa IIZUKA
AU - Fujio MASUOKA
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1997
AB - This paper describes a new reduction mechanism of the stress induced leakage current that is induced by step tunneling of electrons through the step tunneling sites. The concept of this mechanism is based on the deactivation of step tunneling sites for thin oxide. It is verified that the deactivation is electrically realized by the injected electrons int the sites. It is because the step tunneling probability of electrons though the deactivated sites is suppressed, since the electron capture cross section of the neutralized deactivation sites becomes extremely low. The deactivation scheme is as follows: (1) The deactivation of tunneling sites can be realized that the tunneling sites trapped holes change to neutralized tunneling sites due to electrons injection. (2) The injected electron can deactivate the activation tunneling sites only under energy level than the energy level of the injected electrons. It is shown that the above reduction phenomenon can be quantifiably with formulation. These results are very important for high reliable thin oxide films and for high performance ULSI.
ER -