New Write/Erase Operation Technology for Flash EEPROM Cells to lmprove the Read Disturb Characteristics

Tetsuo ENDOH; Hirohisa IIZUKA; Riichirou SHIROTA; Fujio MASUOKA

New Write/Erase Operation Technology for Flash EEPROM Cells to lmprove the Read Disturb Characteristics

Tetsuo ENDOH, Hirohisa IIZUKA, Riichirou SHIROTA, Fujio MASUOKA

Full Text Views

0

Cite this

Summary :

This paper describes the new write/erase operation methods in order to improve the read disturb characteristics for Flash EEPROM cells which are written by channel hot electron injection and erased by F-N tunneling emission from the floating gate to the substrate. The new operation methods is either applying a reverse polarity pulse after each erase pulse or applying a series of shorter erase pulses instead of a long single erase pulse. It is confirmed that by using the above operation methods, the leakage current can be suppressed, and then the read disturb life time after 10⁵ cycles write/erase operation is more than 10 times longer in comparison with the conventional method. This memory cell by using the proposed write/erase operation method has superior potential for application to 256 Mbit Flash memories as beyond.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.10 pp.1317-1323

Publication Date: 1997/10/25

Publicized

Online ISSN

DOI

Type of Manuscript

Category: Integrated Electronics

Cite this

Copy

Tetsuo ENDOH, Hirohisa IIZUKA, Riichirou SHIROTA, Fujio MASUOKA, "New Write/Erase Operation Technology for Flash EEPROM Cells to lmprove the Read Disturb Characteristics" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 10, pp. 1317-1323, October 1997, doi: .
Abstract: This paper describes the new write/erase operation methods in order to improve the read disturb characteristics for Flash EEPROM cells which are written by channel hot electron injection and erased by F-N tunneling emission from the floating gate to the substrate. The new operation methods is either applying a reverse polarity pulse after each erase pulse or applying a series of shorter erase pulses instead of a long single erase pulse. It is confirmed that by using the above operation methods, the leakage current can be suppressed, and then the read disturb life time after 10⁵ cycles write/erase operation is more than 10 times longer in comparison with the conventional method. This memory cell by using the proposed write/erase operation method has superior potential for application to 256 Mbit Flash memories as beyond.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_10_1317/_p

Copy

@ARTICLE{e80-c_10_1317,
author={Tetsuo ENDOH, Hirohisa IIZUKA, Riichirou SHIROTA, Fujio MASUOKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={New Write/Erase Operation Technology for Flash EEPROM Cells to lmprove the Read Disturb Characteristics},
year={1997},
volume={E80-C},
number={10},
pages={1317-1323},
abstract={This paper describes the new write/erase operation methods in order to improve the read disturb characteristics for Flash EEPROM cells which are written by channel hot electron injection and erased by F-N tunneling emission from the floating gate to the substrate. The new operation methods is either applying a reverse polarity pulse after each erase pulse or applying a series of shorter erase pulses instead of a long single erase pulse. It is confirmed that by using the above operation methods, the leakage current can be suppressed, and then the read disturb life time after 10⁵ cycles write/erase operation is more than 10 times longer in comparison with the conventional method. This memory cell by using the proposed write/erase operation method has superior potential for application to 256 Mbit Flash memories as beyond.},
keywords={},
doi={},
ISSN={},
month={October},}

Copy

TY - JOUR
TI - New Write/Erase Operation Technology for Flash EEPROM Cells to lmprove the Read Disturb Characteristics
T2 - IEICE TRANSACTIONS on Electronics
SP - 1317
EP - 1323
AU - Tetsuo ENDOH
AU - Hirohisa IIZUKA
AU - Riichirou SHIROTA
AU - Fujio MASUOKA
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1997
AB - This paper describes the new write/erase operation methods in order to improve the read disturb characteristics for Flash EEPROM cells which are written by channel hot electron injection and erased by F-N tunneling emission from the floating gate to the substrate. The new operation methods is either applying a reverse polarity pulse after each erase pulse or applying a series of shorter erase pulses instead of a long single erase pulse. It is confirmed that by using the above operation methods, the leakage current can be suppressed, and then the read disturb life time after 10⁵ cycles write/erase operation is more than 10 times longer in comparison with the conventional method. This memory cell by using the proposed write/erase operation method has superior potential for application to 256 Mbit Flash memories as beyond.
ER -