Considerations for High-Efficiency Operation of Microwave Transistor Power Amplifiers
Summary :
Microwave power transistors for high efficiency applications are surveyed briefly. Methodologies for microwave transistor power amplifier circuit design are discussed. Microwave transistor power amplifiers are categorized according to their operation into classes A, AB, B, C, and F, and some preliminary results on output power, power efficiency, and power gain for the amplifiers in various classes are provided by an analysis using an ideal transistor model. Circuit conditions controlling the voltage and current waveforms and device parameters such as the knee voltage in the device current-voltage characteristics are discussed for viewpoint of realizing high-efficiency power amplifier operation. A practical power amplifier design is considered with respect to the device characteristics and circuit conditions.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E80-C No.6 pp.726-733
- Publication Date
- 1997/06/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
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Yoichiro TAKAYAMA, "Considerations for High-Efficiency Operation of Microwave Transistor Power Amplifiers" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 6, pp. 726-733, June 1997, doi: .
Abstract: Microwave power transistors for high efficiency applications are surveyed briefly. Methodologies for microwave transistor power amplifier circuit design are discussed. Microwave transistor power amplifiers are categorized according to their operation into classes A, AB, B, C, and F, and some preliminary results on output power, power efficiency, and power gain for the amplifiers in various classes are provided by an analysis using an ideal transistor model. Circuit conditions controlling the voltage and current waveforms and device parameters such as the knee voltage in the device current-voltage characteristics are discussed for viewpoint of realizing high-efficiency power amplifier operation. A practical power amplifier design is considered with respect to the device characteristics and circuit conditions.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_6_726/_p
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@ARTICLE{e80-c_6_726,
author={Yoichiro TAKAYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Considerations for High-Efficiency Operation of Microwave Transistor Power Amplifiers},
year={1997},
volume={E80-C},
number={6},
pages={726-733},
abstract={Microwave power transistors for high efficiency applications are surveyed briefly. Methodologies for microwave transistor power amplifier circuit design are discussed. Microwave transistor power amplifiers are categorized according to their operation into classes A, AB, B, C, and F, and some preliminary results on output power, power efficiency, and power gain for the amplifiers in various classes are provided by an analysis using an ideal transistor model. Circuit conditions controlling the voltage and current waveforms and device parameters such as the knee voltage in the device current-voltage characteristics are discussed for viewpoint of realizing high-efficiency power amplifier operation. A practical power amplifier design is considered with respect to the device characteristics and circuit conditions.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - Considerations for High-Efficiency Operation of Microwave Transistor Power Amplifiers
T2 - IEICE TRANSACTIONS on Electronics
SP - 726
EP - 733
AU - Yoichiro TAKAYAMA
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1997
AB - Microwave power transistors for high efficiency applications are surveyed briefly. Methodologies for microwave transistor power amplifier circuit design are discussed. Microwave transistor power amplifiers are categorized according to their operation into classes A, AB, B, C, and F, and some preliminary results on output power, power efficiency, and power gain for the amplifiers in various classes are provided by an analysis using an ideal transistor model. Circuit conditions controlling the voltage and current waveforms and device parameters such as the knee voltage in the device current-voltage characteristics are discussed for viewpoint of realizing high-efficiency power amplifier operation. A practical power amplifier design is considered with respect to the device characteristics and circuit conditions.
ER -
English
