Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS

Tadahiro SASAKI; Shoji OTAKA; Tadahiko MAEDA; Toshiyuki UMEDA; Kazuya NISHIHORI; Atsushi KAMEYAMA; Mayumi HIROSE; Yoshiaki KITAURA; Naotaka UCHITOMI

Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS

Tadahiro SASAKI, Shoji OTAKA, Tadahiko MAEDA, Toshiyuki UMEDA, Kazuya NISHIHORI, Atsushi KAMEYAMA, Mayumi HIROSE, Yoshiaki KITAURA, Naotaka UCHITOMI

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We have developed a GaAs direct-conversion π/4 shifted QPSK modulator IC equipped with variable attenuators for controlling the output power level of the 1.9 GHz Personal Handy Phone system in Japan (PHS). The IC was successfully demonstrated showing state-of-the-art performance with the image rejection ratio of more than 36 dBc at a low input power of -10 dBm in 1.9 GHz frequency range. By using the "Gate Current Control method by Pull-down FET's" (GCCPF), the equipped attenuators vary the output power from 0 dB to -28 dB by 4 dB step. The IC operates at a 2.7 V supply with power dissipation of 259 mW. The 2.64.6 mm² chip with about 400 elements was fabricated by a 0.5 µm WNx-gate BPLDD GaAs MESFET process.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.6 pp.794-799

Publication Date: 1997/06/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)

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Tadahiro SASAKI, Shoji OTAKA, Tadahiko MAEDA, Toshiyuki UMEDA, Kazuya NISHIHORI, Atsushi KAMEYAMA, Mayumi HIROSE, Yoshiaki KITAURA, Naotaka UCHITOMI, "Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 6, pp. 794-799, June 1997, doi: .
Abstract: We have developed a GaAs direct-conversion π/4 shifted QPSK modulator IC equipped with variable attenuators for controlling the output power level of the 1.9 GHz Personal Handy Phone system in Japan (PHS). The IC was successfully demonstrated showing state-of-the-art performance with the image rejection ratio of more than 36 dBc at a low input power of -10 dBm in 1.9 GHz frequency range. By using the "Gate Current Control method by Pull-down FET's" (GCCPF), the equipped attenuators vary the output power from 0 dB to -28 dB by 4 dB step. The IC operates at a 2.7 V supply with power dissipation of 259 mW. The 2.64.6 mm² chip with about 400 elements was fabricated by a 0.5 µm WNx-gate BPLDD GaAs MESFET process.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_6_794/_p

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@ARTICLE{e80-c_6_794,
author={Tadahiro SASAKI, Shoji OTAKA, Tadahiko MAEDA, Toshiyuki UMEDA, Kazuya NISHIHORI, Atsushi KAMEYAMA, Mayumi HIROSE, Yoshiaki KITAURA, Naotaka UCHITOMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS},
year={1997},
volume={E80-C},
number={6},
pages={794-799},
abstract={We have developed a GaAs direct-conversion π/4 shifted QPSK modulator IC equipped with variable attenuators for controlling the output power level of the 1.9 GHz Personal Handy Phone system in Japan (PHS). The IC was successfully demonstrated showing state-of-the-art performance with the image rejection ratio of more than 36 dBc at a low input power of -10 dBm in 1.9 GHz frequency range. By using the "Gate Current Control method by Pull-down FET's" (GCCPF), the equipped attenuators vary the output power from 0 dB to -28 dB by 4 dB step. The IC operates at a 2.7 V supply with power dissipation of 259 mW. The 2.64.6 mm² chip with about 400 elements was fabricated by a 0.5 µm WNx-gate BPLDD GaAs MESFET process.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS
T2 - IEICE TRANSACTIONS on Electronics
SP - 794
EP - 799
AU - Tadahiro SASAKI
AU - Shoji OTAKA
AU - Tadahiko MAEDA
AU - Toshiyuki UMEDA
AU - Kazuya NISHIHORI
AU - Atsushi KAMEYAMA
AU - Mayumi HIROSE
AU - Yoshiaki KITAURA
AU - Naotaka UCHITOMI
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1997
AB - We have developed a GaAs direct-conversion π/4 shifted QPSK modulator IC equipped with variable attenuators for controlling the output power level of the 1.9 GHz Personal Handy Phone system in Japan (PHS). The IC was successfully demonstrated showing state-of-the-art performance with the image rejection ratio of more than 36 dBc at a low input power of -10 dBm in 1.9 GHz frequency range. By using the "Gate Current Control method by Pull-down FET's" (GCCPF), the equipped attenuators vary the output power from 0 dB to -28 dB by 4 dB step. The IC operates at a 2.7 V supply with power dissipation of 259 mW. The 2.64.6 mm² chip with about 400 elements was fabricated by a 0.5 µm WNx-gate BPLDD GaAs MESFET process.
ER -