Device Parameter Estimation of SOI MOSFET Using One-Dimensional Numerical Simulation Considering Quantum Mechanical Effects
Summary :
We have been studying on subthreshold characteristics of SOI (Silicon-On-Insulator) MOSFET's in terms of substrate bias dependence using a one-dimensional subthreshold device simulator based on Poisson equation in an SOI multilayer structure for estimating structural parameters of real devices. Here, we consider the quantum mechanical effects in the electron inversion layer of thin SOI MOSFET's, such as the two-dimensionally quantized electron states and transports, with a self-consistent solver of Poisson and Schrodinger equations and a mobility model by the relaxation time approximation. From results of simulations, we found a significant difference between this model and the classical model and concluded that the quantum mechanical effects need to be considered in analizing thin-film SOI devices.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E80-C No.6 pp.806-811
- Publication Date
- 1997/06/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Category
- Electronic Circuits
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Rimon IKENO, Hiroshi ITO, Kunihiro ASADA, "Device Parameter Estimation of SOI MOSFET Using One-Dimensional Numerical Simulation Considering Quantum Mechanical Effects" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 6, pp. 806-811, June 1997, doi: .
Abstract: We have been studying on subthreshold characteristics of SOI (Silicon-On-Insulator) MOSFET's in terms of substrate bias dependence using a one-dimensional subthreshold device simulator based on Poisson equation in an SOI multilayer structure for estimating structural parameters of real devices. Here, we consider the quantum mechanical effects in the electron inversion layer of thin SOI MOSFET's, such as the two-dimensionally quantized electron states and transports, with a self-consistent solver of Poisson and Schrodinger equations and a mobility model by the relaxation time approximation. From results of simulations, we found a significant difference between this model and the classical model and concluded that the quantum mechanical effects need to be considered in analizing thin-film SOI devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_6_806/_p
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@ARTICLE{e80-c_6_806,
author={Rimon IKENO, Hiroshi ITO, Kunihiro ASADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Device Parameter Estimation of SOI MOSFET Using One-Dimensional Numerical Simulation Considering Quantum Mechanical Effects},
year={1997},
volume={E80-C},
number={6},
pages={806-811},
abstract={We have been studying on subthreshold characteristics of SOI (Silicon-On-Insulator) MOSFET's in terms of substrate bias dependence using a one-dimensional subthreshold device simulator based on Poisson equation in an SOI multilayer structure for estimating structural parameters of real devices. Here, we consider the quantum mechanical effects in the electron inversion layer of thin SOI MOSFET's, such as the two-dimensionally quantized electron states and transports, with a self-consistent solver of Poisson and Schrodinger equations and a mobility model by the relaxation time approximation. From results of simulations, we found a significant difference between this model and the classical model and concluded that the quantum mechanical effects need to be considered in analizing thin-film SOI devices.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Device Parameter Estimation of SOI MOSFET Using One-Dimensional Numerical Simulation Considering Quantum Mechanical Effects
T2 - IEICE TRANSACTIONS on Electronics
SP - 806
EP - 811
AU - Rimon IKENO
AU - Hiroshi ITO
AU - Kunihiro ASADA
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1997
AB - We have been studying on subthreshold characteristics of SOI (Silicon-On-Insulator) MOSFET's in terms of substrate bias dependence using a one-dimensional subthreshold device simulator based on Poisson equation in an SOI multilayer structure for estimating structural parameters of real devices. Here, we consider the quantum mechanical effects in the electron inversion layer of thin SOI MOSFET's, such as the two-dimensionally quantized electron states and transports, with a self-consistent solver of Poisson and Schrodinger equations and a mobility model by the relaxation time approximation. From results of simulations, we found a significant difference between this model and the classical model and concluded that the quantum mechanical effects need to be considered in analizing thin-film SOI devices.
ER -
English
