This paper describes influence of the relaxation current in BaxSr(1-x)TiO3 (BST) thin films on dynamic random access memory (DRAM) operation. The relaxation current is a transient content of dielectric leakage currents. In BST thin films (expected to be a cell capacitor dielectric in 256 Mb DRAM and beyond), the relaxation current often displays the power law behavior I(t)
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Ken NUMATA, Yukio FUKUDA, Katsuhiro AOKI, Yasutoshi OKUNO, Akitoshi NISHIMURA, "Influence of the Relaxation Current in BaxSr(1-x) TiO3 Thin Film Capacitors on DRAM Operation" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 7, pp. 1043-1055, July 1997, doi: .
Abstract: This paper describes influence of the relaxation current in BaxSr(1-x)TiO3 (BST) thin films on dynamic random access memory (DRAM) operation. The relaxation current is a transient content of dielectric leakage currents. In BST thin films (expected to be a cell capacitor dielectric in 256 Mb DRAM and beyond), the relaxation current often displays the power law behavior I(t)
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_7_1043/_p
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@ARTICLE{e80-c_7_1043,
author={Ken NUMATA, Yukio FUKUDA, Katsuhiro AOKI, Yasutoshi OKUNO, Akitoshi NISHIMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Influence of the Relaxation Current in BaxSr(1-x) TiO3 Thin Film Capacitors on DRAM Operation},
year={1997},
volume={E80-C},
number={7},
pages={1043-1055},
abstract={This paper describes influence of the relaxation current in BaxSr(1-x)TiO3 (BST) thin films on dynamic random access memory (DRAM) operation. The relaxation current is a transient content of dielectric leakage currents. In BST thin films (expected to be a cell capacitor dielectric in 256 Mb DRAM and beyond), the relaxation current often displays the power law behavior I(t)
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Influence of the Relaxation Current in BaxSr(1-x) TiO3 Thin Film Capacitors on DRAM Operation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1043
EP - 1055
AU - Ken NUMATA
AU - Yukio FUKUDA
AU - Katsuhiro AOKI
AU - Yasutoshi OKUNO
AU - Akitoshi NISHIMURA
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1997
AB - This paper describes influence of the relaxation current in BaxSr(1-x)TiO3 (BST) thin films on dynamic random access memory (DRAM) operation. The relaxation current is a transient content of dielectric leakage currents. In BST thin films (expected to be a cell capacitor dielectric in 256 Mb DRAM and beyond), the relaxation current often displays the power law behavior I(t)
ER -