Electrical Properties of YBa2Cu3Ox Films Grown by Liquid Phase Epitaxy

Sadahiko MIURA; Kenji HASHIMOTO; Jian-Guo WEN; Katumi SUZUKI; Tadataka MORISHITA

Electrical Properties of YBa₂Cu₃O_x Films Grown by Liquid Phase Epitaxy

Sadahiko MIURA, Kenji HASHIMOTO, Jian-Guo WEN, Katumi SUZUKI, Tadataka MORISHITA

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YBa₂Cu₃O_x films were grown on MgO(100) substrates by liquid phase epitaxy. Their structural and electrical properties were examined. From TEM plan-view images, it is found that the film consists of large grains whose misorientation angles are less than 1. Although the DC critical current density values decrease with increasing the film thickness, the critical current density value of 9. 310⁵ A/cm² at 77 K is obtained for a 7 µm-thick film. A microstrip resonator at 10. 8 GHz with a YBCO ground plane shows Q₀ values of 14200 at 77 K and 23300 at 40 K, which correspond to surface resistance values of 650 and 400 µΩ, respectively. By using a microstrip line resonator with a Ti/Au ground plane, the critical field of the film at 77 K and 10. 8 GHz is estimated to be 30 Oe. The third-order intercept of the resonator with the Ti/Au ground plane is the input power of +43 dBm and the output power of +30 dBm at 77 K.

Publication: IEICE TRANSACTIONS on Electronics Vol.E81-C No.10 pp.1549-1556

Publication Date: 1998/10/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Low- and High-Temperature Superconductive Electron Devices and Their Applications)

Category: High-Frequency Properties of Thin Films

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Sadahiko MIURA, Kenji HASHIMOTO, Jian-Guo WEN, Katumi SUZUKI, Tadataka MORISHITA, "Electrical Properties of YBa2Cu3Ox Films Grown by Liquid Phase Epitaxy" in IEICE TRANSACTIONS on Electronics, vol. E81-C, no. 10, pp. 1549-1556, October 1998, doi: .
Abstract: YBa₂Cu₃O_x films were grown on MgO(100) substrates by liquid phase epitaxy. Their structural and electrical properties were examined. From TEM plan-view images, it is found that the film consists of large grains whose misorientation angles are less than 1. Although the DC critical current density values decrease with increasing the film thickness, the critical current density value of 9. 310⁵ A/cm² at 77 K is obtained for a 7 µm-thick film. A microstrip resonator at 10. 8 GHz with a YBCO ground plane shows Q₀ values of 14200 at 77 K and 23300 at 40 K, which correspond to surface resistance values of 650 and 400 µΩ, respectively. By using a microstrip line resonator with a Ti/Au ground plane, the critical field of the film at 77 K and 10. 8 GHz is estimated to be 30 Oe. The third-order intercept of the resonator with the Ti/Au ground plane is the input power of +43 dBm and the output power of +30 dBm at 77 K.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_10_1549/_p

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@ARTICLE{e81-c_10_1549,
author={Sadahiko MIURA, Kenji HASHIMOTO, Jian-Guo WEN, Katumi SUZUKI, Tadataka MORISHITA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electrical Properties of YBa2Cu3Ox Films Grown by Liquid Phase Epitaxy},
year={1998},
volume={E81-C},
number={10},
pages={1549-1556},
abstract={YBa₂Cu₃O_x films were grown on MgO(100) substrates by liquid phase epitaxy. Their structural and electrical properties were examined. From TEM plan-view images, it is found that the film consists of large grains whose misorientation angles are less than 1. Although the DC critical current density values decrease with increasing the film thickness, the critical current density value of 9. 310⁵ A/cm² at 77 K is obtained for a 7 µm-thick film. A microstrip resonator at 10. 8 GHz with a YBCO ground plane shows Q₀ values of 14200 at 77 K and 23300 at 40 K, which correspond to surface resistance values of 650 and 400 µΩ, respectively. By using a microstrip line resonator with a Ti/Au ground plane, the critical field of the film at 77 K and 10. 8 GHz is estimated to be 30 Oe. The third-order intercept of the resonator with the Ti/Au ground plane is the input power of +43 dBm and the output power of +30 dBm at 77 K.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - Electrical Properties of YBa2Cu3Ox Films Grown by Liquid Phase Epitaxy
T2 - IEICE TRANSACTIONS on Electronics
SP - 1549
EP - 1556
AU - Sadahiko MIURA
AU - Kenji HASHIMOTO
AU - Jian-Guo WEN
AU - Katumi SUZUKI
AU - Tadataka MORISHITA
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1998
AB - YBa₂Cu₃O_x films were grown on MgO(100) substrates by liquid phase epitaxy. Their structural and electrical properties were examined. From TEM plan-view images, it is found that the film consists of large grains whose misorientation angles are less than 1. Although the DC critical current density values decrease with increasing the film thickness, the critical current density value of 9. 310⁵ A/cm² at 77 K is obtained for a 7 µm-thick film. A microstrip resonator at 10. 8 GHz with a YBCO ground plane shows Q₀ values of 14200 at 77 K and 23300 at 40 K, which correspond to surface resistance values of 650 and 400 µΩ, respectively. By using a microstrip line resonator with a Ti/Au ground plane, the critical field of the film at 77 K and 10. 8 GHz is estimated to be 30 Oe. The third-order intercept of the resonator with the Ti/Au ground plane is the input power of +43 dBm and the output power of +30 dBm at 77 K.
ER -

Electrical Properties of YBa₂Cu₃O_x Films Grown by Liquid Phase Epitaxy

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