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Wataru HATTORI, Tsutomu YOSHITAKE, Shuichi TAHARA, "Narrow YBa2Cu3O7-δ Coplanar Transmission Lines for Reentrant Delay Line Memory Application" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 10, pp. 1557-1564, October 1998, doi: .
Abstract: Reentrant delay line memories using narrow YBa2Cu3O7-δ (YBCO) coplanar transmission lines are proposed. The proposed memory is composed of a looped YBCO coplanar delay line and a 22 semiconductor crossbar switch. This type of memory is superior to semiconductor memories in operating speed, the number of logic gates, power dissipation, and so on. We have also developed narrow and low-loss YBCO coplanar transmission lines for use in these reentrant delay line memories. Etch-back planarization and a patterning process combining Ar-ion milling and wet-etching enabled us to fabricate 18-cm-long YBCO coplanar transmission lines as narrow as 5 µm, and these lines did not suffer from electrical shorts even when the spacing was only 2. 5 µm. The surface resistances calculated from the attenuation constants of 5-, 10-, and 25-µm-wide lines provide similar low values of 0. 18-0. 26 mΩ at 10 GHz and 55 K. This indicates that the process damage was sufficiently suppressed despite the narrow line widths. The 5-µm-wide line attained a low attenuation constant of 2. 7 dB/m, which is similar to that in Cu coaxial cables. Even in the 5-µm-wide line, no significant increase in transmission loss was observed up to an input power level of 16 mW at 10 GHz and 55 K. This input power is comparable to that required to propagate digital signals from semiconductor circuits. Therefore high-speed digital signals can propagate through these narrow YBCO coplanar lines without significant attenuation of the signal pulses. Thus, these narrow YBCO coplanar lines can be used in the reentrant delay line memories.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_10_1557/_p
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@ARTICLE{e81-c_10_1557,
author={Wataru HATTORI, Tsutomu YOSHITAKE, Shuichi TAHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Narrow YBa2Cu3O7-δ Coplanar Transmission Lines for Reentrant Delay Line Memory Application},
year={1998},
volume={E81-C},
number={10},
pages={1557-1564},
abstract={Reentrant delay line memories using narrow YBa2Cu3O7-δ (YBCO) coplanar transmission lines are proposed. The proposed memory is composed of a looped YBCO coplanar delay line and a 22 semiconductor crossbar switch. This type of memory is superior to semiconductor memories in operating speed, the number of logic gates, power dissipation, and so on. We have also developed narrow and low-loss YBCO coplanar transmission lines for use in these reentrant delay line memories. Etch-back planarization and a patterning process combining Ar-ion milling and wet-etching enabled us to fabricate 18-cm-long YBCO coplanar transmission lines as narrow as 5 µm, and these lines did not suffer from electrical shorts even when the spacing was only 2. 5 µm. The surface resistances calculated from the attenuation constants of 5-, 10-, and 25-µm-wide lines provide similar low values of 0. 18-0. 26 mΩ at 10 GHz and 55 K. This indicates that the process damage was sufficiently suppressed despite the narrow line widths. The 5-µm-wide line attained a low attenuation constant of 2. 7 dB/m, which is similar to that in Cu coaxial cables. Even in the 5-µm-wide line, no significant increase in transmission loss was observed up to an input power level of 16 mW at 10 GHz and 55 K. This input power is comparable to that required to propagate digital signals from semiconductor circuits. Therefore high-speed digital signals can propagate through these narrow YBCO coplanar lines without significant attenuation of the signal pulses. Thus, these narrow YBCO coplanar lines can be used in the reentrant delay line memories.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Narrow YBa2Cu3O7-δ Coplanar Transmission Lines for Reentrant Delay Line Memory Application
T2 - IEICE TRANSACTIONS on Electronics
SP - 1557
EP - 1564
AU - Wataru HATTORI
AU - Tsutomu YOSHITAKE
AU - Shuichi TAHARA
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1998
AB - Reentrant delay line memories using narrow YBa2Cu3O7-δ (YBCO) coplanar transmission lines are proposed. The proposed memory is composed of a looped YBCO coplanar delay line and a 22 semiconductor crossbar switch. This type of memory is superior to semiconductor memories in operating speed, the number of logic gates, power dissipation, and so on. We have also developed narrow and low-loss YBCO coplanar transmission lines for use in these reentrant delay line memories. Etch-back planarization and a patterning process combining Ar-ion milling and wet-etching enabled us to fabricate 18-cm-long YBCO coplanar transmission lines as narrow as 5 µm, and these lines did not suffer from electrical shorts even when the spacing was only 2. 5 µm. The surface resistances calculated from the attenuation constants of 5-, 10-, and 25-µm-wide lines provide similar low values of 0. 18-0. 26 mΩ at 10 GHz and 55 K. This indicates that the process damage was sufficiently suppressed despite the narrow line widths. The 5-µm-wide line attained a low attenuation constant of 2. 7 dB/m, which is similar to that in Cu coaxial cables. Even in the 5-µm-wide line, no significant increase in transmission loss was observed up to an input power level of 16 mW at 10 GHz and 55 K. This input power is comparable to that required to propagate digital signals from semiconductor circuits. Therefore high-speed digital signals can propagate through these narrow YBCO coplanar lines without significant attenuation of the signal pulses. Thus, these narrow YBCO coplanar lines can be used in the reentrant delay line memories.
ER -
English
