Analysis of Structure Dependence of Very Short Channel Field Effect Transistor Using Vertical Tunneling with Heterostructures on Silicon

Wataru SAITOH; Katsuyuki YAMAZAKI; Masafumi TSUTSUI; Masahiro ASADA

Analysis of Structure Dependence of Very Short Channel Field Effect Transistor Using Vertical Tunneling with Heterostructures on Silicon

Wataru SAITOH, Katsuyuki YAMAZAKI, Masafumi TSUTSUI, Masahiro ASADA

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We have analyzed a very short channel tunneling field effect transistor which uses new heterostructures (CoSi₂/Si/CdF₂/CaF₂) lattice-matched to the Si substrate. In device operation, the drain current from source (CoSi₂) to drain (CoSi₂) through tunnel barriers (Si) and the channel (CdF₂) is controlled by a gate electric field applied to the barrier between the source and the channel through the gate insulator (CaF₂). Theoretical analysis shows that this transistor has characteristics similar to those of conventional metal-oxide-semiconductor field effect transistors even with channel lengths as short as 5 nm. In addition, we have estimated the theoretical response time of this transistor and showed the possibility of subpicosecond response.

Publication: IEICE TRANSACTIONS on Electronics Vol.E81-C No.12 pp.1918-1925

Publication Date: 1998/12/25

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Category: Semiconductor Materials and Devices

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Wataru SAITOH, Katsuyuki YAMAZAKI, Masafumi TSUTSUI, Masahiro ASADA, "Analysis of Structure Dependence of Very Short Channel Field Effect Transistor Using Vertical Tunneling with Heterostructures on Silicon" in IEICE TRANSACTIONS on Electronics, vol. E81-C, no. 12, pp. 1918-1925, December 1998, doi: .
Abstract: We have analyzed a very short channel tunneling field effect transistor which uses new heterostructures (CoSi₂/Si/CdF₂/CaF₂) lattice-matched to the Si substrate. In device operation, the drain current from source (CoSi₂) to drain (CoSi₂) through tunnel barriers (Si) and the channel (CdF₂) is controlled by a gate electric field applied to the barrier between the source and the channel through the gate insulator (CaF₂). Theoretical analysis shows that this transistor has characteristics similar to those of conventional metal-oxide-semiconductor field effect transistors even with channel lengths as short as 5 nm. In addition, we have estimated the theoretical response time of this transistor and showed the possibility of subpicosecond response.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_12_1918/_p

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@ARTICLE{e81-c_12_1918,
author={Wataru SAITOH, Katsuyuki YAMAZAKI, Masafumi TSUTSUI, Masahiro ASADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of Structure Dependence of Very Short Channel Field Effect Transistor Using Vertical Tunneling with Heterostructures on Silicon},
year={1998},
volume={E81-C},
number={12},
pages={1918-1925},
abstract={We have analyzed a very short channel tunneling field effect transistor which uses new heterostructures (CoSi₂/Si/CdF₂/CaF₂) lattice-matched to the Si substrate. In device operation, the drain current from source (CoSi₂) to drain (CoSi₂) through tunnel barriers (Si) and the channel (CdF₂) is controlled by a gate electric field applied to the barrier between the source and the channel through the gate insulator (CaF₂). Theoretical analysis shows that this transistor has characteristics similar to those of conventional metal-oxide-semiconductor field effect transistors even with channel lengths as short as 5 nm. In addition, we have estimated the theoretical response time of this transistor and showed the possibility of subpicosecond response.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - Analysis of Structure Dependence of Very Short Channel Field Effect Transistor Using Vertical Tunneling with Heterostructures on Silicon
T2 - IEICE TRANSACTIONS on Electronics
SP - 1918
EP - 1925
AU - Wataru SAITOH
AU - Katsuyuki YAMAZAKI
AU - Masafumi TSUTSUI
AU - Masahiro ASADA
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1998
AB - We have analyzed a very short channel tunneling field effect transistor which uses new heterostructures (CoSi₂/Si/CdF₂/CaF₂) lattice-matched to the Si substrate. In device operation, the drain current from source (CoSi₂) to drain (CoSi₂) through tunnel barriers (Si) and the channel (CdF₂) is controlled by a gate electric field applied to the barrier between the source and the channel through the gate insulator (CaF₂). Theoretical analysis shows that this transistor has characteristics similar to those of conventional metal-oxide-semiconductor field effect transistors even with channel lengths as short as 5 nm. In addition, we have estimated the theoretical response time of this transistor and showed the possibility of subpicosecond response.
ER -