Fifth-generation mobile communication systems (5G) must offer significantly higher system capacity than 4G in order to accommodate the rapidly increasing mobile data traffic. Cell densification has been considered an effective way to increase system capacity. Unfortunately, each user equipment (UE) will be in line-of-sight to many more transmission points (TPs) and the resulting inter-cell interference will degrade system capacity. We propose large-scale coordinated multi-user multiple-input multiple-output (LSC-MU-MIMO), which combines MU-MIMO with joint transmission from all the TPs connected to a centralized baseband unit. We previously investigated the downlink performance of LSC-MU-MIMO by computer simulation and found that it can significantly reduce inter-TP interference and improve the system capacity of high-density small cells. In this paper, we investigate the throughput of LSC-MU-MIMO through an indoor trial where the number of coordinated TPs is up to sixteen by using an experimental system that can execute real-time channel estimation based on TDD reciprocity and real-time data transmission. To clarify the improvement in the system capacity of LSC-MU-MIMO, we compared the throughput measured in the same experimental area with and without coordinated transmission in 4-TP, 8-TP, and 16-TP configurations. The results show that with coordinated transmission the system capacity is almost directly proportional to the number of TPs.

We have analyzed a very short channel tunneling field effect transistor which uses new heterostructures (CoSi2/Si/CdF2/CaF2) lattice-matched to the Si substrate. In device operation, the drain current from source (CoSi2) to drain (CoSi2) through tunnel barriers (Si) and the channel (CdF2) is controlled by a gate electric field applied to the barrier between the source and the channel through the gate insulator (CaF2). Theoretical analysis shows that this transistor has characteristics similar to those of conventional metal-oxide-semiconductor field effect transistors even with channel lengths as short as 5 nm. In addition, we have estimated the theoretical response time of this transistor and showed the possibility of subpicosecond response.

We report on the analysis and fabrication of vertical PtSi Schottky source/drain metal oxide semiconductor field effect transistors (MOSFETs), which are suitable for combination with quantum effect devices such as resonant tunneling diodes. Analysis was carried out by one-dimensional approximation of the device structure, WKB approximation of the tunneling probability in Schottky barrier tunneling and self-consistent calculation. Theoretical calculation showed good drivability (750 µA/µm) of this device with tOX = 1 nm and tSi = 5 nm. As a preliminary experiment, devices with a Si channel thickness of 8 nm, 20 nm or 30 nm and a vertical channel length of 55 nm were fabricated. Although the drain current at the "on" state was small due to the thick gate oxide of 8 nm, analysis and measurement showed reasonable agreement with respect to the drivability. Based on the results of theoretical analysis, the device drivability can be much improved by reducing the gate oxide thickness.