Gate Performance in Resonant Tunneling Single Electron Transistor
Summary :
Gate performance for observing Coulomb oscillations and Coulomb diamonds are compared for two types of gated sub-µm double-barrier heterostructures. The first type of device contains modulation-doped barriers, whereas the second type of device contains a narrower band gap material for the well and no barriers with doped impurities. Both the Coulomb oscillations and Coulomb diamonds are modified irregularly as a function of gate voltage in the first type of device, while in the second type of device they are only systematically modified, reflecting atom-like properties of a quantum dot. This difference is explained in terms of the existence of impurities in the first type of device, which inhomogeneously deform the rotational symmetry of the lateral confining potential as the gate voltage is varied. The absence of impurities is the reason why we observe the atom-like properties only in the second type of device.
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- IEICE TRANSACTIONS on Electronics Vol.E81-C No.1 pp.2-7
- Publication Date
- 1998/01/25
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- Special Section PAPER (Special Issue on Technology Challenges for Single Electron Devices)
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Takashi HONDA, Seigo TARUCHA, David Guy AUSTING, "Gate Performance in Resonant Tunneling Single Electron Transistor" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 1, pp. 2-7, January 1998, doi: .
Abstract: Gate performance for observing Coulomb oscillations and Coulomb diamonds are compared for two types of gated sub-µm double-barrier heterostructures. The first type of device contains modulation-doped barriers, whereas the second type of device contains a narrower band gap material for the well and no barriers with doped impurities. Both the Coulomb oscillations and Coulomb diamonds are modified irregularly as a function of gate voltage in the first type of device, while in the second type of device they are only systematically modified, reflecting atom-like properties of a quantum dot. This difference is explained in terms of the existence of impurities in the first type of device, which inhomogeneously deform the rotational symmetry of the lateral confining potential as the gate voltage is varied. The absence of impurities is the reason why we observe the atom-like properties only in the second type of device.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_1_2/_p
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@ARTICLE{e81-c_1_2,
author={Takashi HONDA, Seigo TARUCHA, David Guy AUSTING, },
journal={IEICE TRANSACTIONS on Electronics},
title={Gate Performance in Resonant Tunneling Single Electron Transistor},
year={1998},
volume={E81-C},
number={1},
pages={2-7},
abstract={Gate performance for observing Coulomb oscillations and Coulomb diamonds are compared for two types of gated sub-µm double-barrier heterostructures. The first type of device contains modulation-doped barriers, whereas the second type of device contains a narrower band gap material for the well and no barriers with doped impurities. Both the Coulomb oscillations and Coulomb diamonds are modified irregularly as a function of gate voltage in the first type of device, while in the second type of device they are only systematically modified, reflecting atom-like properties of a quantum dot. This difference is explained in terms of the existence of impurities in the first type of device, which inhomogeneously deform the rotational symmetry of the lateral confining potential as the gate voltage is varied. The absence of impurities is the reason why we observe the atom-like properties only in the second type of device.},
keywords={},
doi={},
ISSN={},
month={January},}
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TY - JOUR
TI - Gate Performance in Resonant Tunneling Single Electron Transistor
T2 - IEICE TRANSACTIONS on Electronics
SP - 2
EP - 7
AU - Takashi HONDA
AU - Seigo TARUCHA
AU - David Guy AUSTING
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1998
AB - Gate performance for observing Coulomb oscillations and Coulomb diamonds are compared for two types of gated sub-µm double-barrier heterostructures. The first type of device contains modulation-doped barriers, whereas the second type of device contains a narrower band gap material for the well and no barriers with doped impurities. Both the Coulomb oscillations and Coulomb diamonds are modified irregularly as a function of gate voltage in the first type of device, while in the second type of device they are only systematically modified, reflecting atom-like properties of a quantum dot. This difference is explained in terms of the existence of impurities in the first type of device, which inhomogeneously deform the rotational symmetry of the lateral confining potential as the gate voltage is varied. The absence of impurities is the reason why we observe the atom-like properties only in the second type of device.
ER -
English
