A new magnetostrictive thin-film cantilever actuator and a new thin-film walking mechanism were developed. The actuators were made of magnetostrictive amorphous Tb-Fe and Sm-Fe thin films, deposited on the opposite sides of a polyimide film substrate. These actuators need not power supply cables because they were remotely driven by external magnetic fields. The static deflection of a 3-mm-long cantilever actuator was as large as 100 µm at 300 Oe field. Moreover the application of ac resonant frequency field of the same intensity yielded deflection of above 500 µm. The walking mechanism ran as fast as in the order of cm/s. The forward and backward running were possible depending on the frequency of applied magnetic field. Such unique characteristics suggest that magnetostrictive thin-film actuators are useful in MEMS applications.

Gate performance for observing Coulomb oscillations and Coulomb diamonds are compared for two types of gated sub-µm double-barrier heterostructures. The first type of device contains modulation-doped barriers, whereas the second type of device contains a narrower band gap material for the well and no barriers with doped impurities. Both the Coulomb oscillations and Coulomb diamonds are modified irregularly as a function of gate voltage in the first type of device, while in the second type of device they are only systematically modified, reflecting atom-like properties of a quantum dot. This difference is explained in terms of the existence of impurities in the first type of device, which inhomogeneously deform the rotational symmetry of the lateral confining potential as the gate voltage is varied. The absence of impurities is the reason why we observe the atom-like properties only in the second type of device.