Preparation of Ferroelectric Sr0. 7Bi2. 3Ta2O9 Thin Films by Misted Deposition Method Using Alkoxide Solution
Summary :
Sr0. 7Bi2. 3Ta2O9(SBT) films are drawing attention as fatigue-free materials. We prepared an SBT film containing discontinuous crystals in the Bi-layered compound using a misted deposition method. In comparison to films prepared by the spin-on method, leakage current was low and spontaneous polarization is high but saturation performance was low. The low saturation performance seems attributable to the inclusion of discontinuous crystals in the Bi-layered compound, while the low leakage current may be explained by the film
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E81-C No.4 pp.590-594
- Publication Date
- 1998/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
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Ichiro KOIWA, Yukihisa OKADA, Juro MITA, "Preparation of Ferroelectric Sr0. 7Bi2. 3Ta2O9 Thin Films by Misted Deposition Method Using Alkoxide Solution" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 4, pp. 590-594, April 1998, doi: .
Abstract: Sr0. 7Bi2. 3Ta2O9(SBT) films are drawing attention as fatigue-free materials. We prepared an SBT film containing discontinuous crystals in the Bi-layered compound using a misted deposition method. In comparison to films prepared by the spin-on method, leakage current was low and spontaneous polarization is high but saturation performance was low. The low saturation performance seems attributable to the inclusion of discontinuous crystals in the Bi-layered compound, while the low leakage current may be explained by the film
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_4_590/_p
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@ARTICLE{e81-c_4_590,
author={Ichiro KOIWA, Yukihisa OKADA, Juro MITA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Preparation of Ferroelectric Sr0. 7Bi2. 3Ta2O9 Thin Films by Misted Deposition Method Using Alkoxide Solution},
year={1998},
volume={E81-C},
number={4},
pages={590-594},
abstract={Sr0. 7Bi2. 3Ta2O9(SBT) films are drawing attention as fatigue-free materials. We prepared an SBT film containing discontinuous crystals in the Bi-layered compound using a misted deposition method. In comparison to films prepared by the spin-on method, leakage current was low and spontaneous polarization is high but saturation performance was low. The low saturation performance seems attributable to the inclusion of discontinuous crystals in the Bi-layered compound, while the low leakage current may be explained by the film
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Preparation of Ferroelectric Sr0. 7Bi2. 3Ta2O9 Thin Films by Misted Deposition Method Using Alkoxide Solution
T2 - IEICE TRANSACTIONS on Electronics
SP - 590
EP - 594
AU - Ichiro KOIWA
AU - Yukihisa OKADA
AU - Juro MITA
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1998
AB - Sr0. 7Bi2. 3Ta2O9(SBT) films are drawing attention as fatigue-free materials. We prepared an SBT film containing discontinuous crystals in the Bi-layered compound using a misted deposition method. In comparison to films prepared by the spin-on method, leakage current was low and spontaneous polarization is high but saturation performance was low. The low saturation performance seems attributable to the inclusion of discontinuous crystals in the Bi-layered compound, while the low leakage current may be explained by the film
ER -
English
