IEICE TRANSACTIONS on Electronics
A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1. 9-GHz PHS
Summary :
Two approaches to the design of resonant-type switches with low distortion characteristics operating at a 2-V power supply voltage have been proposed for use in the 1. 9-GHz-band personal handy phone system (PHS). One approach is to use three stacked FETs at the receiver side. They are composed of a dual-gate FET and a single-gate FET. An insertion loss of 0. 41 dB and an isolation of 44. 0 dB were obtained at 1. 9 GHz. A third-order distortion value of -52 dBc was achieved at 19 dBm output power. Another approach is to insert a capacitor in the resonator. A third-order distortion of -49 dBc at 19-dBm output power when two stacked FETs were used at the receiver side. The layout area of the resonator is drastically reduced as compared with the above-mentioned case.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E81-C No.6 pp.862-867
- Publication Date
- 1998/06/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
- Category
- Functional Modules and the Design Technology
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Katsue K. KAWAKYU, Yoshiko IKEDA, Masami NAGAOKA, Atsushi KAMEYAMA, Naotaka UCHITOMI, "A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1. 9-GHz PHS" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 6, pp. 862-867, June 1998, doi: .
Abstract: Two approaches to the design of resonant-type switches with low distortion characteristics operating at a 2-V power supply voltage have been proposed for use in the 1. 9-GHz-band personal handy phone system (PHS). One approach is to use three stacked FETs at the receiver side. They are composed of a dual-gate FET and a single-gate FET. An insertion loss of 0. 41 dB and an isolation of 44. 0 dB were obtained at 1. 9 GHz. A third-order distortion value of -52 dBc was achieved at 19 dBm output power. Another approach is to insert a capacitor in the resonator. A third-order distortion of -49 dBc at 19-dBm output power when two stacked FETs were used at the receiver side. The layout area of the resonator is drastically reduced as compared with the above-mentioned case.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_6_862/_p
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@ARTICLE{e81-c_6_862,
author={Katsue K. KAWAKYU, Yoshiko IKEDA, Masami NAGAOKA, Atsushi KAMEYAMA, Naotaka UCHITOMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1. 9-GHz PHS},
year={1998},
volume={E81-C},
number={6},
pages={862-867},
abstract={Two approaches to the design of resonant-type switches with low distortion characteristics operating at a 2-V power supply voltage have been proposed for use in the 1. 9-GHz-band personal handy phone system (PHS). One approach is to use three stacked FETs at the receiver side. They are composed of a dual-gate FET and a single-gate FET. An insertion loss of 0. 41 dB and an isolation of 44. 0 dB were obtained at 1. 9 GHz. A third-order distortion value of -52 dBc was achieved at 19 dBm output power. Another approach is to insert a capacitor in the resonator. A third-order distortion of -49 dBc at 19-dBm output power when two stacked FETs were used at the receiver side. The layout area of the resonator is drastically reduced as compared with the above-mentioned case.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1. 9-GHz PHS
T2 - IEICE TRANSACTIONS on Electronics
SP - 862
EP - 867
AU - Katsue K. KAWAKYU
AU - Yoshiko IKEDA
AU - Masami NAGAOKA
AU - Atsushi KAMEYAMA
AU - Naotaka UCHITOMI
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1998
AB - Two approaches to the design of resonant-type switches with low distortion characteristics operating at a 2-V power supply voltage have been proposed for use in the 1. 9-GHz-band personal handy phone system (PHS). One approach is to use three stacked FETs at the receiver side. They are composed of a dual-gate FET and a single-gate FET. An insertion loss of 0. 41 dB and an isolation of 44. 0 dB were obtained at 1. 9 GHz. A third-order distortion value of -52 dBc was achieved at 19 dBm output power. Another approach is to insert a capacitor in the resonator. A third-order distortion of -49 dBc at 19-dBm output power when two stacked FETs were used at the receiver side. The layout area of the resonator is drastically reduced as compared with the above-mentioned case.
ER -
English
