Development of Transparent Alkylsulfonium Salt as a Photoacid Generator for ArF Excimer Laser Lithography

Kaichiro NAKANO; Katsumi MAEDA; Shigeyuki IWASA; Etsuo HASEGAWA

Development of Transparent Alkylsulfonium Salt as a Photoacid Generator for ArF Excimer Laser Lithography

Kaichiro NAKANO, Katsumi MAEDA, Shigeyuki IWASA, Etsuo HASEGAWA

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A series of transparent photochemical acid-generators (PAGs) has been successfully prepared and investigated to apply ArF excimer-laser lithography. These PAGs were synthesized as new alkylsulfonium salts that have cycloalkyl groups but no aromatic ones. They were almost transparent at 193. 4 nm and have high acid-generation efficiency enough to use for ArF excimer-laser resists. The photochemical reaction of these alkylsulfonium salts occurs mainly due to the S-C bond fission. A resist utilizing the PAGs was capable to resolve a 0. 2µm L/S pattern at a 50-mJ/cm² dose with an aqueous alkaline developer. These PAGs are promising materials for use in ArF excimer-laser lithography.

Publication: IEICE TRANSACTIONS on Electronics Vol.E81-C No.7 pp.1045-1050

Publication Date: 1998/07/25

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Type of Manuscript: Special Section PAPER (Special Issue on Organic Materials for Optics and Electronics)

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Kaichiro NAKANO, Katsumi MAEDA, Shigeyuki IWASA, Etsuo HASEGAWA, "Development of Transparent Alkylsulfonium Salt as a Photoacid Generator for ArF Excimer Laser Lithography" in IEICE TRANSACTIONS on Electronics, vol. E81-C, no. 7, pp. 1045-1050, July 1998, doi: .
Abstract: A series of transparent photochemical acid-generators (PAGs) has been successfully prepared and investigated to apply ArF excimer-laser lithography. These PAGs were synthesized as new alkylsulfonium salts that have cycloalkyl groups but no aromatic ones. They were almost transparent at 193. 4 nm and have high acid-generation efficiency enough to use for ArF excimer-laser resists. The photochemical reaction of these alkylsulfonium salts occurs mainly due to the S-C bond fission. A resist utilizing the PAGs was capable to resolve a 0. 2µm L/S pattern at a 50-mJ/cm² dose with an aqueous alkaline developer. These PAGs are promising materials for use in ArF excimer-laser lithography.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_7_1045/_p

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@ARTICLE{e81-c_7_1045,
author={Kaichiro NAKANO, Katsumi MAEDA, Shigeyuki IWASA, Etsuo HASEGAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Development of Transparent Alkylsulfonium Salt as a Photoacid Generator for ArF Excimer Laser Lithography},
year={1998},
volume={E81-C},
number={7},
pages={1045-1050},
abstract={A series of transparent photochemical acid-generators (PAGs) has been successfully prepared and investigated to apply ArF excimer-laser lithography. These PAGs were synthesized as new alkylsulfonium salts that have cycloalkyl groups but no aromatic ones. They were almost transparent at 193. 4 nm and have high acid-generation efficiency enough to use for ArF excimer-laser resists. The photochemical reaction of these alkylsulfonium salts occurs mainly due to the S-C bond fission. A resist utilizing the PAGs was capable to resolve a 0. 2µm L/S pattern at a 50-mJ/cm² dose with an aqueous alkaline developer. These PAGs are promising materials for use in ArF excimer-laser lithography.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - Development of Transparent Alkylsulfonium Salt as a Photoacid Generator for ArF Excimer Laser Lithography
T2 - IEICE TRANSACTIONS on Electronics
SP - 1045
EP - 1050
AU - Kaichiro NAKANO
AU - Katsumi MAEDA
AU - Shigeyuki IWASA
AU - Etsuo HASEGAWA
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1998
AB - A series of transparent photochemical acid-generators (PAGs) has been successfully prepared and investigated to apply ArF excimer-laser lithography. These PAGs were synthesized as new alkylsulfonium salts that have cycloalkyl groups but no aromatic ones. They were almost transparent at 193. 4 nm and have high acid-generation efficiency enough to use for ArF excimer-laser resists. The photochemical reaction of these alkylsulfonium salts occurs mainly due to the S-C bond fission. A resist utilizing the PAGs was capable to resolve a 0. 2µm L/S pattern at a 50-mJ/cm² dose with an aqueous alkaline developer. These PAGs are promising materials for use in ArF excimer-laser lithography.
ER -