A Technique for Extracting Small-Signal Equivalent-Circuit Elements of HEMTs

Man-Young JEON; Byung-Gyu KIM; Young-Jin JEON; Yoon-Ha JEONG

A Technique for Extracting Small-Signal Equivalent-Circuit Elements of HEMTs

Man-Young JEON, Byung-Gyu KIM, Young-Jin JEON, Yoon-Ha JEONG

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We propose a new technique that is able to extract the small-signal equivalent-circuit elements of high electron mobility transistors (HEMTs) without causing any gate degradation. For the determination of extrinsic resistance values, unlike other conventional techniques, the proposed technique does not require an additional relationship for the resistances. For the extraction of extrinsic inductance values, the technique uses the R-estimate, which is known to be more robust relative to the measurement errors than the commonly used least-squares regression. Additionally, we suggest an improved cold HEMT model that seems to be more general than conventional cold HEMT models. With the use of the improved cold HEMT model, the proposed technique extracts the extrinsic resistance and inductance values.

Publication: IEICE TRANSACTIONS on Electronics Vol.E82-C No.11 pp.1968-1976

Publication Date: 1999/11/25

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Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)

Category: Low Power-Consumption RF ICs

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Man-Young JEON, Byung-Gyu KIM, Young-Jin JEON, Yoon-Ha JEONG, "A Technique for Extracting Small-Signal Equivalent-Circuit Elements of HEMTs" in IEICE TRANSACTIONS on Electronics, vol. E82-C, no. 11, pp. 1968-1976, November 1999, doi: .
Abstract: We propose a new technique that is able to extract the small-signal equivalent-circuit elements of high electron mobility transistors (HEMTs) without causing any gate degradation. For the determination of extrinsic resistance values, unlike other conventional techniques, the proposed technique does not require an additional relationship for the resistances. For the extraction of extrinsic inductance values, the technique uses the R-estimate, which is known to be more robust relative to the measurement errors than the commonly used least-squares regression. Additionally, we suggest an improved cold HEMT model that seems to be more general than conventional cold HEMT models. With the use of the improved cold HEMT model, the proposed technique extracts the extrinsic resistance and inductance values.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_1968/_p

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@ARTICLE{e82-c_11_1968,
author={Man-Young JEON, Byung-Gyu KIM, Young-Jin JEON, Yoon-Ha JEONG, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Technique for Extracting Small-Signal Equivalent-Circuit Elements of HEMTs},
year={1999},
volume={E82-C},
number={11},
pages={1968-1976},
abstract={We propose a new technique that is able to extract the small-signal equivalent-circuit elements of high electron mobility transistors (HEMTs) without causing any gate degradation. For the determination of extrinsic resistance values, unlike other conventional techniques, the proposed technique does not require an additional relationship for the resistances. For the extraction of extrinsic inductance values, the technique uses the R-estimate, which is known to be more robust relative to the measurement errors than the commonly used least-squares regression. Additionally, we suggest an improved cold HEMT model that seems to be more general than conventional cold HEMT models. With the use of the improved cold HEMT model, the proposed technique extracts the extrinsic resistance and inductance values.},
keywords={},
doi={},
ISSN={},
month={November},}

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TY - JOUR
TI - A Technique for Extracting Small-Signal Equivalent-Circuit Elements of HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1968
EP - 1976
AU - Man-Young JEON
AU - Byung-Gyu KIM
AU - Young-Jin JEON
AU - Yoon-Ha JEONG
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - We propose a new technique that is able to extract the small-signal equivalent-circuit elements of high electron mobility transistors (HEMTs) without causing any gate degradation. For the determination of extrinsic resistance values, unlike other conventional techniques, the proposed technique does not require an additional relationship for the resistances. For the extraction of extrinsic inductance values, the technique uses the R-estimate, which is known to be more robust relative to the measurement errors than the commonly used least-squares regression. Additionally, we suggest an improved cold HEMT model that seems to be more general than conventional cold HEMT models. With the use of the improved cold HEMT model, the proposed technique extracts the extrinsic resistance and inductance values.
ER -