We propose novel all-optical functional devices using waveguide X-junctions with localized third order optical nonlinearity, where one branch is made from a Kerr-like nonlinear material and the rest are made from linear ones. All-optical switching operations can be obtained because of bistable like nonlinear dispersion characteristics in linear and nonlinear coupled guided-wave systems. The performances of the devices are analyzed by the Beam Propagation Method (BPM) modified for nonlinear waveguides combined with the nonlinear normal mode analysis. The methods to construct the waveguides with localized nonlinearity are also discussed by utilizing the technologies for the selective control of a band-gap energy of semiconductor Multi Quantum Well (MQW) structures and the performances of the designed devices are presented.
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Hiroshi MURATA, Masayuki IZUTSU, Tadasi SUETA, "All-Optical Switching in Novel Waveguide X-Junctions with Localized Nonlinearity" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 2, pp. 321-326, February 1999, doi: .
Abstract: We propose novel all-optical functional devices using waveguide X-junctions with localized third order optical nonlinearity, where one branch is made from a Kerr-like nonlinear material and the rest are made from linear ones. All-optical switching operations can be obtained because of bistable like nonlinear dispersion characteristics in linear and nonlinear coupled guided-wave systems. The performances of the devices are analyzed by the Beam Propagation Method (BPM) modified for nonlinear waveguides combined with the nonlinear normal mode analysis. The methods to construct the waveguides with localized nonlinearity are also discussed by utilizing the technologies for the selective control of a band-gap energy of semiconductor Multi Quantum Well (MQW) structures and the performances of the designed devices are presented.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_2_321/_p
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@ARTICLE{e82-c_2_321,
author={Hiroshi MURATA, Masayuki IZUTSU, Tadasi SUETA, },
journal={IEICE TRANSACTIONS on Electronics},
title={All-Optical Switching in Novel Waveguide X-Junctions with Localized Nonlinearity},
year={1999},
volume={E82-C},
number={2},
pages={321-326},
abstract={We propose novel all-optical functional devices using waveguide X-junctions with localized third order optical nonlinearity, where one branch is made from a Kerr-like nonlinear material and the rest are made from linear ones. All-optical switching operations can be obtained because of bistable like nonlinear dispersion characteristics in linear and nonlinear coupled guided-wave systems. The performances of the devices are analyzed by the Beam Propagation Method (BPM) modified for nonlinear waveguides combined with the nonlinear normal mode analysis. The methods to construct the waveguides with localized nonlinearity are also discussed by utilizing the technologies for the selective control of a band-gap energy of semiconductor Multi Quantum Well (MQW) structures and the performances of the designed devices are presented.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - All-Optical Switching in Novel Waveguide X-Junctions with Localized Nonlinearity
T2 - IEICE TRANSACTIONS on Electronics
SP - 321
EP - 326
AU - Hiroshi MURATA
AU - Masayuki IZUTSU
AU - Tadasi SUETA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1999
AB - We propose novel all-optical functional devices using waveguide X-junctions with localized third order optical nonlinearity, where one branch is made from a Kerr-like nonlinear material and the rest are made from linear ones. All-optical switching operations can be obtained because of bistable like nonlinear dispersion characteristics in linear and nonlinear coupled guided-wave systems. The performances of the devices are analyzed by the Beam Propagation Method (BPM) modified for nonlinear waveguides combined with the nonlinear normal mode analysis. The methods to construct the waveguides with localized nonlinearity are also discussed by utilizing the technologies for the selective control of a band-gap energy of semiconductor Multi Quantum Well (MQW) structures and the performances of the designed devices are presented.
ER -