High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs

Hiroshi MASUDA; Kiyoshi OUCHI; Akihisa TERANO; Hideyuki SUZUKI; Koichi WATANABE; Tohru OKA; Hirokazu MATSUBARA; Tomonori TANOUE

High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs

Hiroshi MASUDA, Kiyoshi OUCHI, Akihisa TERANO, Hideyuki SUZUKI, Koichi WATANABE, Tohru OKA, Hirokazu MATSUBARA, Tomonori TANOUE

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We have developed a fabrication technique for high-performance high-thermal-stability InP/InGaAs heterojunction bipolar transistors (HBTs) for use in 40-Gb/s ICs. The HBT's T-shaped emitter electrode structure simplifies the fabrication process and enables high controllability of spacing between the emitter and the base electrodes. A highly-C-doped base, grown by gas-source MBE, and a new Pt-based metal system results in a low base resistance. An InP subcollector suppresses thermal runaway of HBTs at high collector current better than a conventional InGaAs subcollector does. Using these techniques, we fabricated a very-high-performance HBT with an extremely high cutoff frequency f_T of 235 GHz. The RF measurements show that the collector current at the peak cutoff frequency is inversely proportional to collector thickness. We also fabricated a static 1/2 frequency divider, that can be used for 40-Gb/s optical transmission systems, operating up to 44 GHz. This divider confirmed that the developed HBT is applicable to 40-Gb/s optical transmission ICs.

Publication: IEICE TRANSACTIONS on Electronics Vol.E82-C No.3 pp.419-427

Publication Date: 1999/03/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)

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Hiroshi MASUDA, Kiyoshi OUCHI, Akihisa TERANO, Hideyuki SUZUKI, Koichi WATANABE, Tohru OKA, Hirokazu MATSUBARA, Tomonori TANOUE, "High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs" in IEICE TRANSACTIONS on Electronics, vol. E82-C, no. 3, pp. 419-427, March 1999, doi: .
Abstract: We have developed a fabrication technique for high-performance high-thermal-stability InP/InGaAs heterojunction bipolar transistors (HBTs) for use in 40-Gb/s ICs. The HBT's T-shaped emitter electrode structure simplifies the fabrication process and enables high controllability of spacing between the emitter and the base electrodes. A highly-C-doped base, grown by gas-source MBE, and a new Pt-based metal system results in a low base resistance. An InP subcollector suppresses thermal runaway of HBTs at high collector current better than a conventional InGaAs subcollector does. Using these techniques, we fabricated a very-high-performance HBT with an extremely high cutoff frequency f_T of 235 GHz. The RF measurements show that the collector current at the peak cutoff frequency is inversely proportional to collector thickness. We also fabricated a static 1/2 frequency divider, that can be used for 40-Gb/s optical transmission systems, operating up to 44 GHz. This divider confirmed that the developed HBT is applicable to 40-Gb/s optical transmission ICs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_3_419/_p

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@ARTICLE{e82-c_3_419,
author={Hiroshi MASUDA, Kiyoshi OUCHI, Akihisa TERANO, Hideyuki SUZUKI, Koichi WATANABE, Tohru OKA, Hirokazu MATSUBARA, Tomonori TANOUE, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs},
year={1999},
volume={E82-C},
number={3},
pages={419-427},
abstract={We have developed a fabrication technique for high-performance high-thermal-stability InP/InGaAs heterojunction bipolar transistors (HBTs) for use in 40-Gb/s ICs. The HBT's T-shaped emitter electrode structure simplifies the fabrication process and enables high controllability of spacing between the emitter and the base electrodes. A highly-C-doped base, grown by gas-source MBE, and a new Pt-based metal system results in a low base resistance. An InP subcollector suppresses thermal runaway of HBTs at high collector current better than a conventional InGaAs subcollector does. Using these techniques, we fabricated a very-high-performance HBT with an extremely high cutoff frequency f_T of 235 GHz. The RF measurements show that the collector current at the peak cutoff frequency is inversely proportional to collector thickness. We also fabricated a static 1/2 frequency divider, that can be used for 40-Gb/s optical transmission systems, operating up to 44 GHz. This divider confirmed that the developed HBT is applicable to 40-Gb/s optical transmission ICs.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs
T2 - IEICE TRANSACTIONS on Electronics
SP - 419
EP - 427
AU - Hiroshi MASUDA
AU - Kiyoshi OUCHI
AU - Akihisa TERANO
AU - Hideyuki SUZUKI
AU - Koichi WATANABE
AU - Tohru OKA
AU - Hirokazu MATSUBARA
AU - Tomonori TANOUE
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1999
AB - We have developed a fabrication technique for high-performance high-thermal-stability InP/InGaAs heterojunction bipolar transistors (HBTs) for use in 40-Gb/s ICs. The HBT's T-shaped emitter electrode structure simplifies the fabrication process and enables high controllability of spacing between the emitter and the base electrodes. A highly-C-doped base, grown by gas-source MBE, and a new Pt-based metal system results in a low base resistance. An InP subcollector suppresses thermal runaway of HBTs at high collector current better than a conventional InGaAs subcollector does. Using these techniques, we fabricated a very-high-performance HBT with an extremely high cutoff frequency f_T of 235 GHz. The RF measurements show that the collector current at the peak cutoff frequency is inversely proportional to collector thickness. We also fabricated a static 1/2 frequency divider, that can be used for 40-Gb/s optical transmission systems, operating up to 44 GHz. This divider confirmed that the developed HBT is applicable to 40-Gb/s optical transmission ICs.
ER -