High Frequency Characteristics of Dynamic Threshold-Voltage MOSFET (DTMOS) under Ultra-Low Supply Voltage

Tetsu TANAKA; Youichi MOMIYAMA; Toshihiro SUGII

High Frequency Characteristics of Dynamic Threshold-Voltage MOSFET (DTMOS) under Ultra-Low Supply Voltage

Tetsu TANAKA, Youichi MOMIYAMA, Toshihiro SUGII

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Dynamic Threshold-Voltage MOSFETs (DTMOS) in which the body is connected to the gate provide extremely high transconductance for supply voltages as low as under 0.7 V. This is because the forward body-source bias lowers the threshold voltage, which results in large gate drive and large drain current. This paper describes the high frequency characteristics of DTMOS for the first time. The DTMOS we analyzed has a small parasitic resistance due to employing optimized Co salicide technology. It also has a small parasitic capacitance due to a reduction in the overlapping region between the gate and drain, which is achieved by employing gate poly-Si oxidation prior to LDD implantation. We obtained an F_t of 78 GHz and an F_max of 37 GHz for a 0. 1-µm-L_eff DTMOS even at a supply voltage of 0.7 V. We also observed an F_max enhancement by 1.5 times for a 0.12-µm-L_eff DTMOS compared to a conventional SOI MOSFET, which we attributed to high transconductance and large output resistance. The DTMOS can be considered as the most promising device for low-power RF LSIs.

Publication: IEICE TRANSACTIONS on Electronics Vol.E82-C No.3 pp.538-543

Publication Date: 1999/03/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)

Category: Silicon Devices

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Tetsu TANAKA, Youichi MOMIYAMA, Toshihiro SUGII, "High Frequency Characteristics of Dynamic Threshold-Voltage MOSFET (DTMOS) under Ultra-Low Supply Voltage" in IEICE TRANSACTIONS on Electronics, vol. E82-C, no. 3, pp. 538-543, March 1999, doi: .
Abstract: Dynamic Threshold-Voltage MOSFETs (DTMOS) in which the body is connected to the gate provide extremely high transconductance for supply voltages as low as under 0.7 V. This is because the forward body-source bias lowers the threshold voltage, which results in large gate drive and large drain current. This paper describes the high frequency characteristics of DTMOS for the first time. The DTMOS we analyzed has a small parasitic resistance due to employing optimized Co salicide technology. It also has a small parasitic capacitance due to a reduction in the overlapping region between the gate and drain, which is achieved by employing gate poly-Si oxidation prior to LDD implantation. We obtained an F_t of 78 GHz and an F_max of 37 GHz for a 0. 1-µm-L_eff DTMOS even at a supply voltage of 0.7 V. We also observed an F_max enhancement by 1.5 times for a 0.12-µm-L_eff DTMOS compared to a conventional SOI MOSFET, which we attributed to high transconductance and large output resistance. The DTMOS can be considered as the most promising device for low-power RF LSIs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_3_538/_p

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@ARTICLE{e82-c_3_538,
author={Tetsu TANAKA, Youichi MOMIYAMA, Toshihiro SUGII, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Frequency Characteristics of Dynamic Threshold-Voltage MOSFET (DTMOS) under Ultra-Low Supply Voltage},
year={1999},
volume={E82-C},
number={3},
pages={538-543},
abstract={Dynamic Threshold-Voltage MOSFETs (DTMOS) in which the body is connected to the gate provide extremely high transconductance for supply voltages as low as under 0.7 V. This is because the forward body-source bias lowers the threshold voltage, which results in large gate drive and large drain current. This paper describes the high frequency characteristics of DTMOS for the first time. The DTMOS we analyzed has a small parasitic resistance due to employing optimized Co salicide technology. It also has a small parasitic capacitance due to a reduction in the overlapping region between the gate and drain, which is achieved by employing gate poly-Si oxidation prior to LDD implantation. We obtained an F_t of 78 GHz and an F_max of 37 GHz for a 0. 1-µm-L_eff DTMOS even at a supply voltage of 0.7 V. We also observed an F_max enhancement by 1.5 times for a 0.12-µm-L_eff DTMOS compared to a conventional SOI MOSFET, which we attributed to high transconductance and large output resistance. The DTMOS can be considered as the most promising device for low-power RF LSIs.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - High Frequency Characteristics of Dynamic Threshold-Voltage MOSFET (DTMOS) under Ultra-Low Supply Voltage
T2 - IEICE TRANSACTIONS on Electronics
SP - 538
EP - 543
AU - Tetsu TANAKA
AU - Youichi MOMIYAMA
AU - Toshihiro SUGII
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1999
AB - Dynamic Threshold-Voltage MOSFETs (DTMOS) in which the body is connected to the gate provide extremely high transconductance for supply voltages as low as under 0.7 V. This is because the forward body-source bias lowers the threshold voltage, which results in large gate drive and large drain current. This paper describes the high frequency characteristics of DTMOS for the first time. The DTMOS we analyzed has a small parasitic resistance due to employing optimized Co salicide technology. It also has a small parasitic capacitance due to a reduction in the overlapping region between the gate and drain, which is achieved by employing gate poly-Si oxidation prior to LDD implantation. We obtained an F_t of 78 GHz and an F_max of 37 GHz for a 0. 1-µm-L_eff DTMOS even at a supply voltage of 0.7 V. We also observed an F_max enhancement by 1.5 times for a 0.12-µm-L_eff DTMOS compared to a conventional SOI MOSFET, which we attributed to high transconductance and large output resistance. The DTMOS can be considered as the most promising device for low-power RF LSIs.
ER -