Efficient Full-Band Monte Carlo Simulation of Silicon Devices
Summary :
The full-band Monte Carlo technique is currently the most accurate device simulation method, but its usefulness is limited because it is very CPU intensive. This work describes efficient algorithms in detail, which raise the efficiency of the full-band Monte Carlo method to a level where it becomes applicable in the device design process beyond exemplary simulations. The k-space is discretized with a nonuniform tetrahedral grid, which minimizes the discretization error of the linear energy interpolation and memory requirements. A consistent discretization of the inverse mass tensor is utilized to formulate efficient transport parameter estimators. Particle scattering is modeled in such a way that a very fast rejection technique can be used for the generation of the final state eliminating the main cause of the inefficiency of full-band Monte Carlo simulations. The developed full-band Monte Carlo simulator is highly efficient. For example, in conjunction with the nonself-consistent simulation technique CPU times of a few CPU minutes per bias point are achieved for substrate current calculations. Self-consistent calculations of the drain current of a 60nm-NMOSFET take about a few CPU hours demonstrating the feasibility of full-band Monte Carlo simulations.
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- IEICE TRANSACTIONS on Electronics Vol.E82-C No.6 pp.870-879
- Publication Date
- 1999/06/25
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- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
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Christoph JUNGEMANN, Stefan KEITH, Martin BARTELS, Bernd MEINERZHAGEN, "Efficient Full-Band Monte Carlo Simulation of Silicon Devices" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 6, pp. 870-879, June 1999, doi: .
Abstract: The full-band Monte Carlo technique is currently the most accurate device simulation method, but its usefulness is limited because it is very CPU intensive. This work describes efficient algorithms in detail, which raise the efficiency of the full-band Monte Carlo method to a level where it becomes applicable in the device design process beyond exemplary simulations. The k-space is discretized with a nonuniform tetrahedral grid, which minimizes the discretization error of the linear energy interpolation and memory requirements. A consistent discretization of the inverse mass tensor is utilized to formulate efficient transport parameter estimators. Particle scattering is modeled in such a way that a very fast rejection technique can be used for the generation of the final state eliminating the main cause of the inefficiency of full-band Monte Carlo simulations. The developed full-band Monte Carlo simulator is highly efficient. For example, in conjunction with the nonself-consistent simulation technique CPU times of a few CPU minutes per bias point are achieved for substrate current calculations. Self-consistent calculations of the drain current of a 60nm-NMOSFET take about a few CPU hours demonstrating the feasibility of full-band Monte Carlo simulations.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_6_870/_p
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@ARTICLE{e82-c_6_870,
author={Christoph JUNGEMANN, Stefan KEITH, Martin BARTELS, Bernd MEINERZHAGEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Efficient Full-Band Monte Carlo Simulation of Silicon Devices},
year={1999},
volume={E82-C},
number={6},
pages={870-879},
abstract={The full-band Monte Carlo technique is currently the most accurate device simulation method, but its usefulness is limited because it is very CPU intensive. This work describes efficient algorithms in detail, which raise the efficiency of the full-band Monte Carlo method to a level where it becomes applicable in the device design process beyond exemplary simulations. The k-space is discretized with a nonuniform tetrahedral grid, which minimizes the discretization error of the linear energy interpolation and memory requirements. A consistent discretization of the inverse mass tensor is utilized to formulate efficient transport parameter estimators. Particle scattering is modeled in such a way that a very fast rejection technique can be used for the generation of the final state eliminating the main cause of the inefficiency of full-band Monte Carlo simulations. The developed full-band Monte Carlo simulator is highly efficient. For example, in conjunction with the nonself-consistent simulation technique CPU times of a few CPU minutes per bias point are achieved for substrate current calculations. Self-consistent calculations of the drain current of a 60nm-NMOSFET take about a few CPU hours demonstrating the feasibility of full-band Monte Carlo simulations.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - Efficient Full-Band Monte Carlo Simulation of Silicon Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 870
EP - 879
AU - Christoph JUNGEMANN
AU - Stefan KEITH
AU - Martin BARTELS
AU - Bernd MEINERZHAGEN
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1999
AB - The full-band Monte Carlo technique is currently the most accurate device simulation method, but its usefulness is limited because it is very CPU intensive. This work describes efficient algorithms in detail, which raise the efficiency of the full-band Monte Carlo method to a level where it becomes applicable in the device design process beyond exemplary simulations. The k-space is discretized with a nonuniform tetrahedral grid, which minimizes the discretization error of the linear energy interpolation and memory requirements. A consistent discretization of the inverse mass tensor is utilized to formulate efficient transport parameter estimators. Particle scattering is modeled in such a way that a very fast rejection technique can be used for the generation of the final state eliminating the main cause of the inefficiency of full-band Monte Carlo simulations. The developed full-band Monte Carlo simulator is highly efficient. For example, in conjunction with the nonself-consistent simulation technique CPU times of a few CPU minutes per bias point are achieved for substrate current calculations. Self-consistent calculations of the drain current of a 60nm-NMOSFET take about a few CPU hours demonstrating the feasibility of full-band Monte Carlo simulations.
ER -
English
