Quantum Transport Modeling of Ultrasmall Semiconductor Devices
Summary :
With the progress of LSI technology, the electronic device size is presently scaling down to the nano-meter region. In such an ultrasmall device, it is indispensable to take quantum mechanical effects into account in device modeling. In this paper, we first review the approaches to the quantum mechanical modeling of carrier transport in ultrasmall semiconductor devices. Then, we propose a novel quantum device model based upon a direct solution of the Boltzmann equation for multi-dimensional practical use. In this model, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E82-C No.6 pp.880-888
- Publication Date
- 1999/06/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Hideaki TSUCHIYA, Tanroku MIYOSHI, "Quantum Transport Modeling of Ultrasmall Semiconductor Devices" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 6, pp. 880-888, June 1999, doi: .
Abstract: With the progress of LSI technology, the electronic device size is presently scaling down to the nano-meter region. In such an ultrasmall device, it is indispensable to take quantum mechanical effects into account in device modeling. In this paper, we first review the approaches to the quantum mechanical modeling of carrier transport in ultrasmall semiconductor devices. Then, we propose a novel quantum device model based upon a direct solution of the Boltzmann equation for multi-dimensional practical use. In this model, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_6_880/_p
Copy
@ARTICLE{e82-c_6_880,
author={Hideaki TSUCHIYA, Tanroku MIYOSHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Quantum Transport Modeling of Ultrasmall Semiconductor Devices},
year={1999},
volume={E82-C},
number={6},
pages={880-888},
abstract={With the progress of LSI technology, the electronic device size is presently scaling down to the nano-meter region. In such an ultrasmall device, it is indispensable to take quantum mechanical effects into account in device modeling. In this paper, we first review the approaches to the quantum mechanical modeling of carrier transport in ultrasmall semiconductor devices. Then, we propose a novel quantum device model based upon a direct solution of the Boltzmann equation for multi-dimensional practical use. In this model, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - Quantum Transport Modeling of Ultrasmall Semiconductor Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 880
EP - 888
AU - Hideaki TSUCHIYA
AU - Tanroku MIYOSHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1999
AB - With the progress of LSI technology, the electronic device size is presently scaling down to the nano-meter region. In such an ultrasmall device, it is indispensable to take quantum mechanical effects into account in device modeling. In this paper, we first review the approaches to the quantum mechanical modeling of carrier transport in ultrasmall semiconductor devices. Then, we propose a novel quantum device model based upon a direct solution of the Boltzmann equation for multi-dimensional practical use. In this model, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation.
ER -
English
