Non-Quasi-Static Small Signal Model of Four-Terminal MOS Transistors
Summary :
Precise simulation of non-quasi-static (NQS) characteristics is crucial for the analog application of MOS transistors. This paper presents the small signal admittance model of four-terminal NQS MOS transistors by solving the differential equation derived from the primary principle. The model contains the bulk-charge effect, the mobility reduction, and the velocity saturation. The results are compared with those for the conventional quasi-static model, the BSIM3v3 NQS model, and the 2-D device simulation.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.12 pp.1950-1960
- Publication Date
- 2000/12/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
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Yoichiro NIITSU, "Non-Quasi-Static Small Signal Model of Four-Terminal MOS Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 12, pp. 1950-1960, December 2000, doi: .
Abstract: Precise simulation of non-quasi-static (NQS) characteristics is crucial for the analog application of MOS transistors. This paper presents the small signal admittance model of four-terminal NQS MOS transistors by solving the differential equation derived from the primary principle. The model contains the bulk-charge effect, the mobility reduction, and the velocity saturation. The results are compared with those for the conventional quasi-static model, the BSIM3v3 NQS model, and the 2-D device simulation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_12_1950/_p
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@ARTICLE{e83-c_12_1950,
author={Yoichiro NIITSU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Non-Quasi-Static Small Signal Model of Four-Terminal MOS Transistors},
year={2000},
volume={E83-C},
number={12},
pages={1950-1960},
abstract={Precise simulation of non-quasi-static (NQS) characteristics is crucial for the analog application of MOS transistors. This paper presents the small signal admittance model of four-terminal NQS MOS transistors by solving the differential equation derived from the primary principle. The model contains the bulk-charge effect, the mobility reduction, and the velocity saturation. The results are compared with those for the conventional quasi-static model, the BSIM3v3 NQS model, and the 2-D device simulation.},
keywords={},
doi={},
ISSN={},
month={December},}
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TY - JOUR
TI - Non-Quasi-Static Small Signal Model of Four-Terminal MOS Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1950
EP - 1960
AU - Yoichiro NIITSU
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2000
AB - Precise simulation of non-quasi-static (NQS) characteristics is crucial for the analog application of MOS transistors. This paper presents the small signal admittance model of four-terminal NQS MOS transistors by solving the differential equation derived from the primary principle. The model contains the bulk-charge effect, the mobility reduction, and the velocity saturation. The results are compared with those for the conventional quasi-static model, the BSIM3v3 NQS model, and the 2-D device simulation.
ER -
English
