InGaN MQW Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
Summary :
Continuous-wave operation at room-tempera-ture has been demonstrated for InGaN multi-quantum-well (MQW) laser diodes (LDs) grown on FIELO GaN substrates with a backside n-contact. This was made possible by introducing important new concept of reducing threading dislocations that occur during the growth of the GaN substrates. We found that InGaN active layers grown on FIELO GaN are superior to those grown on conventional sapphire substrates in terms of their growth mode and the resultant In compositional fluctuation. The fabricated laser diode shows the threshold current, the threshold current density and the threshold voltage were 36 mA, 5.4 kA/cm2 and 7.5 V, respectively, with the lasing wavelength of 412 nm and internal quantum efficiency as high as 98%.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.4 pp.552-559
- Publication Date
- 2000/04/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
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Masaru KURAMOTO, A. Atsushi YAMAGUCHI, Akira USUI, Masashi MIZUTA, "InGaN MQW Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 552-559, April 2000, doi: .
Abstract: Continuous-wave operation at room-tempera-ture has been demonstrated for InGaN multi-quantum-well (MQW) laser diodes (LDs) grown on FIELO GaN substrates with a backside n-contact. This was made possible by introducing important new concept of reducing threading dislocations that occur during the growth of the GaN substrates. We found that InGaN active layers grown on FIELO GaN are superior to those grown on conventional sapphire substrates in terms of their growth mode and the resultant In compositional fluctuation. The fabricated laser diode shows the threshold current, the threshold current density and the threshold voltage were 36 mA, 5.4 kA/cm2 and 7.5 V, respectively, with the lasing wavelength of 412 nm and internal quantum efficiency as high as 98%.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_552/_p
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@ARTICLE{e83-c_4_552,
author={Masaru KURAMOTO, A. Atsushi YAMAGUCHI, Akira USUI, Masashi MIZUTA, },
journal={IEICE TRANSACTIONS on Electronics},
title={InGaN MQW Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact},
year={2000},
volume={E83-C},
number={4},
pages={552-559},
abstract={Continuous-wave operation at room-tempera-ture has been demonstrated for InGaN multi-quantum-well (MQW) laser diodes (LDs) grown on FIELO GaN substrates with a backside n-contact. This was made possible by introducing important new concept of reducing threading dislocations that occur during the growth of the GaN substrates. We found that InGaN active layers grown on FIELO GaN are superior to those grown on conventional sapphire substrates in terms of their growth mode and the resultant In compositional fluctuation. The fabricated laser diode shows the threshold current, the threshold current density and the threshold voltage were 36 mA, 5.4 kA/cm2 and 7.5 V, respectively, with the lasing wavelength of 412 nm and internal quantum efficiency as high as 98%.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - InGaN MQW Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
T2 - IEICE TRANSACTIONS on Electronics
SP - 552
EP - 559
AU - Masaru KURAMOTO
AU - A. Atsushi YAMAGUCHI
AU - Akira USUI
AU - Masashi MIZUTA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - Continuous-wave operation at room-tempera-ture has been demonstrated for InGaN multi-quantum-well (MQW) laser diodes (LDs) grown on FIELO GaN substrates with a backside n-contact. This was made possible by introducing important new concept of reducing threading dislocations that occur during the growth of the GaN substrates. We found that InGaN active layers grown on FIELO GaN are superior to those grown on conventional sapphire substrates in terms of their growth mode and the resultant In compositional fluctuation. The fabricated laser diode shows the threshold current, the threshold current density and the threshold voltage were 36 mA, 5.4 kA/cm2 and 7.5 V, respectively, with the lasing wavelength of 412 nm and internal quantum efficiency as high as 98%.
ER -
English
