Pure green ZnTe light-emitting diodes (LEDs) were first realized reproducibly based on high quality ZnTe substrates and a simple thermal diffusion process. This success which overcomes the compensation effect in II-VI materials is due to the use of high quality p-type ZnTe single crystals with low dislocation densities of the level of 2000 cm-2 grown by the vertical gradient freezing (VGF) method and the suppression of as compensating point defects by low temperature annealing with covering the surface of the substrates by the deposition of n-type dopant, Al. The thermal diffusion coefficient and the activation energy of Al were determined from the pn interface observed by scanning electron spectroscopy (SEM). The formation of the intrinsic pn junctions was confirmed from the electron-beam induced current (EBIC) observation and I-V measurement. The bright 550 nm electroluminescence (EL) from these pn-junctions was reproducibly observed under room light at room temperature, with the lifetime exceeding 1000 hrs.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Kenji SATO, Mikio HANAFUSA, Akira NODA, Atsutoshi ARAKAWA, Toshiaki ASAHI, Masayuki UCHIDA, Osamu ODA, "Pure Green Light-Emitting Diodes Based on High Quality ZnTe Substrates and a Thermal Diffusion Process" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 579-584, April 2000, doi: .
Abstract: Pure green ZnTe light-emitting diodes (LEDs) were first realized reproducibly based on high quality ZnTe substrates and a simple thermal diffusion process. This success which overcomes the compensation effect in II-VI materials is due to the use of high quality p-type ZnTe single crystals with low dislocation densities of the level of 2000 cm-2 grown by the vertical gradient freezing (VGF) method and the suppression of as compensating point defects by low temperature annealing with covering the surface of the substrates by the deposition of n-type dopant, Al. The thermal diffusion coefficient and the activation energy of Al were determined from the pn interface observed by scanning electron spectroscopy (SEM). The formation of the intrinsic pn junctions was confirmed from the electron-beam induced current (EBIC) observation and I-V measurement. The bright 550 nm electroluminescence (EL) from these pn-junctions was reproducibly observed under room light at room temperature, with the lifetime exceeding 1000 hrs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_579/_p
Copy
@ARTICLE{e83-c_4_579,
author={Kenji SATO, Mikio HANAFUSA, Akira NODA, Atsutoshi ARAKAWA, Toshiaki ASAHI, Masayuki UCHIDA, Osamu ODA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Pure Green Light-Emitting Diodes Based on High Quality ZnTe Substrates and a Thermal Diffusion Process},
year={2000},
volume={E83-C},
number={4},
pages={579-584},
abstract={Pure green ZnTe light-emitting diodes (LEDs) were first realized reproducibly based on high quality ZnTe substrates and a simple thermal diffusion process. This success which overcomes the compensation effect in II-VI materials is due to the use of high quality p-type ZnTe single crystals with low dislocation densities of the level of 2000 cm-2 grown by the vertical gradient freezing (VGF) method and the suppression of as compensating point defects by low temperature annealing with covering the surface of the substrates by the deposition of n-type dopant, Al. The thermal diffusion coefficient and the activation energy of Al were determined from the pn interface observed by scanning electron spectroscopy (SEM). The formation of the intrinsic pn junctions was confirmed from the electron-beam induced current (EBIC) observation and I-V measurement. The bright 550 nm electroluminescence (EL) from these pn-junctions was reproducibly observed under room light at room temperature, with the lifetime exceeding 1000 hrs.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Pure Green Light-Emitting Diodes Based on High Quality ZnTe Substrates and a Thermal Diffusion Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 579
EP - 584
AU - Kenji SATO
AU - Mikio HANAFUSA
AU - Akira NODA
AU - Atsutoshi ARAKAWA
AU - Toshiaki ASAHI
AU - Masayuki UCHIDA
AU - Osamu ODA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - Pure green ZnTe light-emitting diodes (LEDs) were first realized reproducibly based on high quality ZnTe substrates and a simple thermal diffusion process. This success which overcomes the compensation effect in II-VI materials is due to the use of high quality p-type ZnTe single crystals with low dislocation densities of the level of 2000 cm-2 grown by the vertical gradient freezing (VGF) method and the suppression of as compensating point defects by low temperature annealing with covering the surface of the substrates by the deposition of n-type dopant, Al. The thermal diffusion coefficient and the activation energy of Al were determined from the pn interface observed by scanning electron spectroscopy (SEM). The formation of the intrinsic pn junctions was confirmed from the electron-beam induced current (EBIC) observation and I-V measurement. The bright 550 nm electroluminescence (EL) from these pn-junctions was reproducibly observed under room light at room temperature, with the lifetime exceeding 1000 hrs.
ER -