ECR-MBE Growth of GaN Using Hydrogen-Nitrogen Mixed Gas Plasma

Yasuo CHIBA; Tsutomu ARAKI; Yasushi NANISHI

ECR-MBE Growth of GaN Using Hydrogen-Nitrogen Mixed Gas Plasma

Yasuo CHIBA, Tsutomu ARAKI, Yasushi NANISHI

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Electron-cyclotron-resonance plasma-excited molecular beam epitaxial (ECR-MBE) growth of GaN using hydrogen-nitrogen mixed gas plasma was investigated. The growth rate of GaN was drastically increased by addition of hydrogen to nitrogen plasma. The transition of reflection high energy electron diffraction (RHEED) patterns, from streaked patterns created without the presence of hydrogen to spotted patterns in the presence of hydrogen, indicated that the effective V/III ratio was increased by the addition of hydrogen. NH_x radical families were detected in hydrogen-nitrogen mixed gas plasma by quadrupole mass spectroscopy and optical emission spectroscopy. These radicals were considered to be responsible for the observed increase in growth rate. Transmission electron microscope observation showed that the surface morphology of GaN without hydrogen was relatively flat and that with hydrogen was columnar with {1 0 ~1 1} facets. It seems likely that the columnar structure of the GaN layers grown with hydrogen were strongly related to initial island growth.

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.4 pp.627-632

Publication Date: 2000/04/25

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Type of Manuscript: Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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Yasuo CHIBA, Tsutomu ARAKI, Yasushi NANISHI, "ECR-MBE Growth of GaN Using Hydrogen-Nitrogen Mixed Gas Plasma" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 4, pp. 627-632, April 2000, doi: .
Abstract: Electron-cyclotron-resonance plasma-excited molecular beam epitaxial (ECR-MBE) growth of GaN using hydrogen-nitrogen mixed gas plasma was investigated. The growth rate of GaN was drastically increased by addition of hydrogen to nitrogen plasma. The transition of reflection high energy electron diffraction (RHEED) patterns, from streaked patterns created without the presence of hydrogen to spotted patterns in the presence of hydrogen, indicated that the effective V/III ratio was increased by the addition of hydrogen. NH_x radical families were detected in hydrogen-nitrogen mixed gas plasma by quadrupole mass spectroscopy and optical emission spectroscopy. These radicals were considered to be responsible for the observed increase in growth rate. Transmission electron microscope observation showed that the surface morphology of GaN without hydrogen was relatively flat and that with hydrogen was columnar with {1 0 ~1 1} facets. It seems likely that the columnar structure of the GaN layers grown with hydrogen were strongly related to initial island growth.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_627/_p

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@ARTICLE{e83-c_4_627,
author={Yasuo CHIBA, Tsutomu ARAKI, Yasushi NANISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={ECR-MBE Growth of GaN Using Hydrogen-Nitrogen Mixed Gas Plasma},
year={2000},
volume={E83-C},
number={4},
pages={627-632},
abstract={Electron-cyclotron-resonance plasma-excited molecular beam epitaxial (ECR-MBE) growth of GaN using hydrogen-nitrogen mixed gas plasma was investigated. The growth rate of GaN was drastically increased by addition of hydrogen to nitrogen plasma. The transition of reflection high energy electron diffraction (RHEED) patterns, from streaked patterns created without the presence of hydrogen to spotted patterns in the presence of hydrogen, indicated that the effective V/III ratio was increased by the addition of hydrogen. NH_x radical families were detected in hydrogen-nitrogen mixed gas plasma by quadrupole mass spectroscopy and optical emission spectroscopy. These radicals were considered to be responsible for the observed increase in growth rate. Transmission electron microscope observation showed that the surface morphology of GaN without hydrogen was relatively flat and that with hydrogen was columnar with {1 0 ~1 1} facets. It seems likely that the columnar structure of the GaN layers grown with hydrogen were strongly related to initial island growth.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - ECR-MBE Growth of GaN Using Hydrogen-Nitrogen Mixed Gas Plasma
T2 - IEICE TRANSACTIONS on Electronics
SP - 627
EP - 632
AU - Yasuo CHIBA
AU - Tsutomu ARAKI
AU - Yasushi NANISHI
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - Electron-cyclotron-resonance plasma-excited molecular beam epitaxial (ECR-MBE) growth of GaN using hydrogen-nitrogen mixed gas plasma was investigated. The growth rate of GaN was drastically increased by addition of hydrogen to nitrogen plasma. The transition of reflection high energy electron diffraction (RHEED) patterns, from streaked patterns created without the presence of hydrogen to spotted patterns in the presence of hydrogen, indicated that the effective V/III ratio was increased by the addition of hydrogen. NH_x radical families were detected in hydrogen-nitrogen mixed gas plasma by quadrupole mass spectroscopy and optical emission spectroscopy. These radicals were considered to be responsible for the observed increase in growth rate. Transmission electron microscope observation showed that the surface morphology of GaN without hydrogen was relatively flat and that with hydrogen was columnar with {1 0 ~1 1} facets. It seems likely that the columnar structure of the GaN layers grown with hydrogen were strongly related to initial island growth.
ER -