Developments of GaN Bulk Substrates for GaN Based LEDs and LDs

Osamu ODA; Takayuki INOUE; Yoji SEKI; Akihiro WAKAHARA; Akira YOSHIDA; Satoshi KURAI; Yoichi YAMADA; Tsunemasa TAGUCHI

Developments of GaN Bulk Substrates for GaN Based LEDs and LDs

Osamu ODA, Takayuki INOUE, Yoji SEKI, Akihiro WAKAHARA, Akira YOSHIDA, Satoshi KURAI, Yoichi YAMADA, Tsunemasa TAGUCHI

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In this paper, the recent development of GaN bulk substrates is reviewed. Among various works on HVPE thick epitaxial growth, the largest free-standing GaN substrates upto 34 cm² has been first obtained by the HVPE method using NGO substrates, whose lattice constant has a good matching with that of GaN. For developing larger GaN substrates with lower production cost, the ultra-high pressure solution growth method is being developed not only in Poland but also in Japan under "The Light for the 21st Century" national project.

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.4 pp.639-646

Publication Date: 2000/04/25

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Type of Manuscript: Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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Osamu ODA, Takayuki INOUE, Yoji SEKI, Akihiro WAKAHARA, Akira YOSHIDA, Satoshi KURAI, Yoichi YAMADA, Tsunemasa TAGUCHI, "Developments of GaN Bulk Substrates for GaN Based LEDs and LDs" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 4, pp. 639-646, April 2000, doi: .
Abstract: In this paper, the recent development of GaN bulk substrates is reviewed. Among various works on HVPE thick epitaxial growth, the largest free-standing GaN substrates upto 34 cm² has been first obtained by the HVPE method using NGO substrates, whose lattice constant has a good matching with that of GaN. For developing larger GaN substrates with lower production cost, the ultra-high pressure solution growth method is being developed not only in Poland but also in Japan under "The Light for the 21st Century" national project.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_639/_p

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@ARTICLE{e83-c_4_639,
author={Osamu ODA, Takayuki INOUE, Yoji SEKI, Akihiro WAKAHARA, Akira YOSHIDA, Satoshi KURAI, Yoichi YAMADA, Tsunemasa TAGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Developments of GaN Bulk Substrates for GaN Based LEDs and LDs},
year={2000},
volume={E83-C},
number={4},
pages={639-646},
abstract={In this paper, the recent development of GaN bulk substrates is reviewed. Among various works on HVPE thick epitaxial growth, the largest free-standing GaN substrates upto 34 cm² has been first obtained by the HVPE method using NGO substrates, whose lattice constant has a good matching with that of GaN. For developing larger GaN substrates with lower production cost, the ultra-high pressure solution growth method is being developed not only in Poland but also in Japan under "The Light for the 21st Century" national project.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Developments of GaN Bulk Substrates for GaN Based LEDs and LDs
T2 - IEICE TRANSACTIONS on Electronics
SP - 639
EP - 646
AU - Osamu ODA
AU - Takayuki INOUE
AU - Yoji SEKI
AU - Akihiro WAKAHARA
AU - Akira YOSHIDA
AU - Satoshi KURAI
AU - Yoichi YAMADA
AU - Tsunemasa TAGUCHI
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - In this paper, the recent development of GaN bulk substrates is reviewed. Among various works on HVPE thick epitaxial growth, the largest free-standing GaN substrates upto 34 cm² has been first obtained by the HVPE method using NGO substrates, whose lattice constant has a good matching with that of GaN. For developing larger GaN substrates with lower production cost, the ultra-high pressure solution growth method is being developed not only in Poland but also in Japan under "The Light for the 21st Century" national project.
ER -