3-Dimensional Process Simulation of Thermal Annealing of Low Dose Implanted Dopants in Silicon
Summary :
This paper reports the implementation in three dimensions (3D) of diffusion models for low dose implanted dopants in silicon and the various numerical issues associated with it. In order to allow the end-users to choose between high accuracy or small calculation time, a conventional and 5-species diffusion models have been implemented in the 3D module DIFOX-3D belonging to the PROMPT plateform. By comparison with one and two-dimensional (1D and 2D) simulations performed with IMPACT-4, where calibrated models exist, the validity of this 3D models have been checked. Finally, the results obtained for a 3-dimensional simulation of a rapid thermal annealing step involved in the manufacturing of a MOS transistor are presented what show the capability of this module to handle the optimization of real devices.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.8 pp.1267-1274
- Publication Date
- 2000/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
- Category
- Process Modeling and Simulation
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Vincent SENEZ, Jerome HERBAUX, Thomas HOFFMANN, Evelyne LAMPIN, "3-Dimensional Process Simulation of Thermal Annealing of Low Dose Implanted Dopants in Silicon" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1267-1274, August 2000, doi: .
Abstract: This paper reports the implementation in three dimensions (3D) of diffusion models for low dose implanted dopants in silicon and the various numerical issues associated with it. In order to allow the end-users to choose between high accuracy or small calculation time, a conventional and 5-species diffusion models have been implemented in the 3D module DIFOX-3D belonging to the PROMPT plateform. By comparison with one and two-dimensional (1D and 2D) simulations performed with IMPACT-4, where calibrated models exist, the validity of this 3D models have been checked. Finally, the results obtained for a 3-dimensional simulation of a rapid thermal annealing step involved in the manufacturing of a MOS transistor are presented what show the capability of this module to handle the optimization of real devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1267/_p
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@ARTICLE{e83-c_8_1267,
author={Vincent SENEZ, Jerome HERBAUX, Thomas HOFFMANN, Evelyne LAMPIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={3-Dimensional Process Simulation of Thermal Annealing of Low Dose Implanted Dopants in Silicon},
year={2000},
volume={E83-C},
number={8},
pages={1267-1274},
abstract={This paper reports the implementation in three dimensions (3D) of diffusion models for low dose implanted dopants in silicon and the various numerical issues associated with it. In order to allow the end-users to choose between high accuracy or small calculation time, a conventional and 5-species diffusion models have been implemented in the 3D module DIFOX-3D belonging to the PROMPT plateform. By comparison with one and two-dimensional (1D and 2D) simulations performed with IMPACT-4, where calibrated models exist, the validity of this 3D models have been checked. Finally, the results obtained for a 3-dimensional simulation of a rapid thermal annealing step involved in the manufacturing of a MOS transistor are presented what show the capability of this module to handle the optimization of real devices.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - 3-Dimensional Process Simulation of Thermal Annealing of Low Dose Implanted Dopants in Silicon
T2 - IEICE TRANSACTIONS on Electronics
SP - 1267
EP - 1274
AU - Vincent SENEZ
AU - Jerome HERBAUX
AU - Thomas HOFFMANN
AU - Evelyne LAMPIN
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - This paper reports the implementation in three dimensions (3D) of diffusion models for low dose implanted dopants in silicon and the various numerical issues associated with it. In order to allow the end-users to choose between high accuracy or small calculation time, a conventional and 5-species diffusion models have been implemented in the 3D module DIFOX-3D belonging to the PROMPT plateform. By comparison with one and two-dimensional (1D and 2D) simulations performed with IMPACT-4, where calibrated models exist, the validity of this 3D models have been checked. Finally, the results obtained for a 3-dimensional simulation of a rapid thermal annealing step involved in the manufacturing of a MOS transistor are presented what show the capability of this module to handle the optimization of real devices.
ER -
English
