IEICE TRANSACTIONS on Electronics
HBT Collector Characterization by the Spectral Photocurrent Technique
Summary :
Photoelectric techniques, such as photoluminescence are commonly used to evaluate and qualify heterostructure materials. These studies provide invaluable information on the energy configuration of these devices. In this paper, we extend photoelectric techniques to the evaluation of fully fabricated HBTs. We describe photoconduction measurements performed on the base/collector junctions in GaAs based HBTs. The devices studied contained a window in the emitter metal and monochromatic, chopped light was focused through a microscope into the window. The measurements are performed on wafer at room temperature. The spectral characteristic of the photocurrent provides information on the material and allows the determination of the source of the measured photocurrent. The dependence of the photocurrent on the junction bias allows the profiling of the junction. Three different collector structures were investigated, containing GaAs, AlGaAs, and InGaP. The effects of electron and hole barriers are evaluated. The information obtained allows for the design of improved HBTs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.10 pp.1383-1388
- Publication Date
- 2001/10/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
- Category
- III-V HBTs
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Fritz SCHUERMEYER, Peter J. ZAMPARDI, Sharon FITZSIMMONS, Roger E. WELSER, Noren PAN, "HBT Collector Characterization by the Spectral Photocurrent Technique" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1383-1388, October 2001, doi: .
Abstract: Photoelectric techniques, such as photoluminescence are commonly used to evaluate and qualify heterostructure materials. These studies provide invaluable information on the energy configuration of these devices. In this paper, we extend photoelectric techniques to the evaluation of fully fabricated HBTs. We describe photoconduction measurements performed on the base/collector junctions in GaAs based HBTs. The devices studied contained a window in the emitter metal and monochromatic, chopped light was focused through a microscope into the window. The measurements are performed on wafer at room temperature. The spectral characteristic of the photocurrent provides information on the material and allows the determination of the source of the measured photocurrent. The dependence of the photocurrent on the junction bias allows the profiling of the junction. Three different collector structures were investigated, containing GaAs, AlGaAs, and InGaP. The effects of electron and hole barriers are evaluated. The information obtained allows for the design of improved HBTs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1383/_p
Copy
@ARTICLE{e84-c_10_1383,
author={Fritz SCHUERMEYER, Peter J. ZAMPARDI, Sharon FITZSIMMONS, Roger E. WELSER, Noren PAN, },
journal={IEICE TRANSACTIONS on Electronics},
title={HBT Collector Characterization by the Spectral Photocurrent Technique},
year={2001},
volume={E84-C},
number={10},
pages={1383-1388},
abstract={Photoelectric techniques, such as photoluminescence are commonly used to evaluate and qualify heterostructure materials. These studies provide invaluable information on the energy configuration of these devices. In this paper, we extend photoelectric techniques to the evaluation of fully fabricated HBTs. We describe photoconduction measurements performed on the base/collector junctions in GaAs based HBTs. The devices studied contained a window in the emitter metal and monochromatic, chopped light was focused through a microscope into the window. The measurements are performed on wafer at room temperature. The spectral characteristic of the photocurrent provides information on the material and allows the determination of the source of the measured photocurrent. The dependence of the photocurrent on the junction bias allows the profiling of the junction. Three different collector structures were investigated, containing GaAs, AlGaAs, and InGaP. The effects of electron and hole barriers are evaluated. The information obtained allows for the design of improved HBTs.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - HBT Collector Characterization by the Spectral Photocurrent Technique
T2 - IEICE TRANSACTIONS on Electronics
SP - 1383
EP - 1388
AU - Fritz SCHUERMEYER
AU - Peter J. ZAMPARDI
AU - Sharon FITZSIMMONS
AU - Roger E. WELSER
AU - Noren PAN
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - Photoelectric techniques, such as photoluminescence are commonly used to evaluate and qualify heterostructure materials. These studies provide invaluable information on the energy configuration of these devices. In this paper, we extend photoelectric techniques to the evaluation of fully fabricated HBTs. We describe photoconduction measurements performed on the base/collector junctions in GaAs based HBTs. The devices studied contained a window in the emitter metal and monochromatic, chopped light was focused through a microscope into the window. The measurements are performed on wafer at room temperature. The spectral characteristic of the photocurrent provides information on the material and allows the determination of the source of the measured photocurrent. The dependence of the photocurrent on the junction bias allows the profiling of the junction. Three different collector structures were investigated, containing GaAs, AlGaAs, and InGaP. The effects of electron and hole barriers are evaluated. The information obtained allows for the design of improved HBTs.
ER -
English
