SiGe Hetero-FETs Potential for Micropower Applications
Summary :
Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostrucure FET at the low power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.10 pp.1414-1422
- Publication Date
- 2001/10/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
- Category
- SiGe HBTs & FETs
Authors
Keyword
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Christos PAPAVASSILIOU, Kristel FOBELETS, Chris TOUMAZOU, "SiGe Hetero-FETs Potential for Micropower Applications" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1414-1422, October 2001, doi: .
Abstract: Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostrucure FET at the low power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1414/_p
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@ARTICLE{e84-c_10_1414,
author={Christos PAPAVASSILIOU, Kristel FOBELETS, Chris TOUMAZOU, },
journal={IEICE TRANSACTIONS on Electronics},
title={SiGe Hetero-FETs Potential for Micropower Applications},
year={2001},
volume={E84-C},
number={10},
pages={1414-1422},
abstract={Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostrucure FET at the low power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - SiGe Hetero-FETs Potential for Micropower Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1414
EP - 1422
AU - Christos PAPAVASSILIOU
AU - Kristel FOBELETS
AU - Chris TOUMAZOU
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostrucure FET at the low power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.
ER -
English
