IEICE TRANSACTIONS on Electronics
A 15-50 GHz-Band GaAs MMIC Variable Attenuator with 20-dB Attenuation Control
Summary :
A 15-50 GHz-band GaAs MMIC variable attenuator has been developed for microwave and millimeter-wave wireless communications systems. The attenuator employs a balanced distributed configuration using shunt connected HEMT's in order to realize a broadband operation, a low insertion loss and a good impedance matching with simple control bias scheme. The MMIC was fabricated with a pseudomorphic HEMT device technology. It has exhibited an insertion loss as low as 1.6 dB with an attenuation control range as wide as 21 dB at 26 GHz. It has also shown a good linearity of an input power of more than 12 dBm at 1-dB compression point and that of 26.3 dBm at a 3rd-order intercept point.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.10 pp.1543-1547
- Publication Date
- 2001/10/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
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Kazuya NISHIHORI, Shigeru WATANABE, Fumio SASAKI, Kazuhiro ARAI, "A 15-50 GHz-Band GaAs MMIC Variable Attenuator with 20-dB Attenuation Control" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1543-1547, October 2001, doi: .
Abstract: A 15-50 GHz-band GaAs MMIC variable attenuator has been developed for microwave and millimeter-wave wireless communications systems. The attenuator employs a balanced distributed configuration using shunt connected HEMT's in order to realize a broadband operation, a low insertion loss and a good impedance matching with simple control bias scheme. The MMIC was fabricated with a pseudomorphic HEMT device technology. It has exhibited an insertion loss as low as 1.6 dB with an attenuation control range as wide as 21 dB at 26 GHz. It has also shown a good linearity of an input power of more than 12 dBm at 1-dB compression point and that of 26.3 dBm at a 3rd-order intercept point.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1543/_p
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@ARTICLE{e84-c_10_1543,
author={Kazuya NISHIHORI, Shigeru WATANABE, Fumio SASAKI, Kazuhiro ARAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 15-50 GHz-Band GaAs MMIC Variable Attenuator with 20-dB Attenuation Control},
year={2001},
volume={E84-C},
number={10},
pages={1543-1547},
abstract={A 15-50 GHz-band GaAs MMIC variable attenuator has been developed for microwave and millimeter-wave wireless communications systems. The attenuator employs a balanced distributed configuration using shunt connected HEMT's in order to realize a broadband operation, a low insertion loss and a good impedance matching with simple control bias scheme. The MMIC was fabricated with a pseudomorphic HEMT device technology. It has exhibited an insertion loss as low as 1.6 dB with an attenuation control range as wide as 21 dB at 26 GHz. It has also shown a good linearity of an input power of more than 12 dBm at 1-dB compression point and that of 26.3 dBm at a 3rd-order intercept point.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - A 15-50 GHz-Band GaAs MMIC Variable Attenuator with 20-dB Attenuation Control
T2 - IEICE TRANSACTIONS on Electronics
SP - 1543
EP - 1547
AU - Kazuya NISHIHORI
AU - Shigeru WATANABE
AU - Fumio SASAKI
AU - Kazuhiro ARAI
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - A 15-50 GHz-band GaAs MMIC variable attenuator has been developed for microwave and millimeter-wave wireless communications systems. The attenuator employs a balanced distributed configuration using shunt connected HEMT's in order to realize a broadband operation, a low insertion loss and a good impedance matching with simple control bias scheme. The MMIC was fabricated with a pseudomorphic HEMT device technology. It has exhibited an insertion loss as low as 1.6 dB with an attenuation control range as wide as 21 dB at 26 GHz. It has also shown a good linearity of an input power of more than 12 dBm at 1-dB compression point and that of 26.3 dBm at a 3rd-order intercept point.
ER -
English
