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[Author] Fumio SASAKI(5hit)

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  • Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation

    Yasunobu SAITO  Fumio SASAKI  Hisao KAWASAKI  Hiroshi ISHIMURA  Hirokuni TOKUDA  Motoharu OHTOMO  

     
    PAPER

      Vol:
    E76-C No:9
      Page(s):
    1379-1383

    Gamma(γ)-ray irradiation effects have been investigated on three types of low-noise HEMTs, AlGaAs/GaAs conventional HEMT (conv. HEMT), AlGaAs/InGaAs pseudomorphic HEMT (P-HEMT) and InAlAs/InGaAs/InP HEMT (InP-based HEMT). The dose of irradiated γ-rays ranges from 1105 to 1108 rad. DC and RF characteristics of each type of HEMT are measured before and after irradiation and the parameter changes are investigated. For conv. HEMT and P-HEMT, no degradation of DC parameter is observed up to 108 rad, while noise figure (NF) at 12 GHz remains constant up to 107 rad and degrades by 0.1 dB at 108 rad. The InP-based HEMT shows IDSS and gm increase by about 10% at a dose of 108 rad and its NF at 18 GHz lowers gradually with the radiation dose. It has been found that the radiation hardness is greater than 107 rad for all types of HEMTs and over a hundred years of life can be expected against γ-ray irradiation in the space environment.

  • A 15-50 GHz-Band GaAs MMIC Variable Attenuator with 20-dB Attenuation Control

    Kazuya NISHIHORI  Shigeru WATANABE  Fumio SASAKI  Kazuhiro ARAI  

     
    PAPER

      Vol:
    E84-C No:10
      Page(s):
    1543-1547

    A 15-50 GHz-band GaAs MMIC variable attenuator has been developed for microwave and millimeter-wave wireless communications systems. The attenuator employs a balanced distributed configuration using shunt connected HEMT's in order to realize a broadband operation, a low insertion loss and a good impedance matching with simple control bias scheme. The MMIC was fabricated with a pseudomorphic HEMT device technology. It has exhibited an insertion loss as low as 1.6 dB with an attenuation control range as wide as 21 dB at 26 GHz. It has also shown a good linearity of an input power of more than 12 dBm at 1-dB compression point and that of 26.3 dBm at a 3rd-order intercept point.

  • A Compact 40 GHz MMIC Power Amplifier with Improved Power Stage Design

    Yasushi SHIZUKI  Ken ONODERA  Fumio SASAKI  Kazuhiro ARAI  Hiroyuki YOSHINAGA  Juichi OZAKI  

     
    PAPER

      Vol:
    E84-C No:10
      Page(s):
    1535-1542

    A compact MMIC power amplifier which delivers P1dB of 25.8 dBm (380 mW) at 40 GHz has been developed. To make the chip width narrower, only one unit block using two parallel HEMTs is applied for a power stage. For achieving broadband interstage matching when using wide gate-width unit devices in the power stage, a new configuration of a unit block which contains a shunt capacitance is proposed.

  • Characteristics of GaAs HEMTs with Flip-Chip Interconnections

    Naoko ONO  Fumio SASAKI  Kazuhiro ARAI  Hiroyuki YOSHINAGA  Yuji ISEKI  

     
    PAPER-Amplifier

      Vol:
    E86-C No:12
      Page(s):
    2452-2461

    A GaAs HEMT with flip-chip interconnections using a suitable transmission line has been developed. The underfill resin, which was not used for the conventional flip-chip interconnection structure, was adopted between GaAs chip and assembly substrate to obtain high reliability. The underfill resin is effective in relaxing the thermal stress between the chip and the substrate and in encapsulating the chip. There are various possible ground current paths for the GaAs chip in the structure with flip-chip interconnections. An actual ground current path is determined depending on the transmission line type for the chip. For an active device, it is important to utilize an assembly structure capable of realizing excellent high-frequency characteristics. In addition, each transmission line for the chip has its own transmission characterizations such as characteristic impedance. Therefore, it is necessary to choose a suitable transmission line for the chip. We evaluated the high-frequency characteristics of the HEMT test element groups (TEGs) with flip-chip interconnection for three types of transmission lines: with a microstrip line (MSL), with a coplanar waveguide (CPW), and with an inverted microstrip line (IMSL). All three types of TEGs had similar values of a maximum available power gain (MAG) at 30 GHz. However, it was found that the IMSL-type TEG, which had superior characteristics in high-frequency ranges of more than 30 GHz, is the most suitable type. The IMSL-type TEG had an MAG of 10.02 dB and a Rollett stability factor K of 1.20 at 30 GHz.

  • A K-Band MMIC Frequency Doubler Using Resistive Series Feedback Circuit

    Yasushi SHIZUKI  Yumi FUCHIDA  Fumio SASAKI  Kazuhiro ARAI  Shigeru WATANABE  

     
    PAPER-Microwaves, Millimeter-Waves

      Vol:
    E83-C No:5
      Page(s):
    759-766

    A novel K-band MMIC frequency doubler has been developed using resistive series feedback circuit. The doubler exhibits much better D/U ratio, smaller output power variation against ambient temperature and lower power consumption than those of the conventional single-ended doubler. This paper presents the simulation results on the effect of the resistive series feedback by harmonic balance methods. To obtain practical and accurate simulation results, newly developed gate charge model for Cgs and Cgd is introduced. The fabricated result of the proposed MMIC is also demonstrated.