Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation

Yasunobu SAITO; Fumio SASAKI; Hisao KAWASAKI; Hiroshi ISHIMURA; Hirokuni TOKUDA; Motoharu OHTOMO

Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation

Yasunobu SAITO, Fumio SASAKI, Hisao KAWASAKI, Hiroshi ISHIMURA, Hirokuni TOKUDA, Motoharu OHTOMO

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Gamma(γ)-ray irradiation effects have been investigated on three types of low-noise HEMTs, AlGaAs/GaAs conventional HEMT (conv. HEMT), AlGaAs/InGaAs pseudomorphic HEMT (P-HEMT) and InAlAs/InGaAs/InP HEMT (InP-based HEMT). The dose of irradiated γ-rays ranges from 110⁵ to 110⁸ rad. DC and RF characteristics of each type of HEMT are measured before and after irradiation and the parameter changes are investigated. For conv. HEMT and P-HEMT, no degradation of DC parameter is observed up to 10⁸ rad, while noise figure (NF) at 12 GHz remains constant up to 10⁷ rad and degrades by 0.1 dB at 10⁸ rad. The InP-based HEMT shows I_DSS and g_m increase by about 10% at a dose of 10⁸ rad and its NF at 18 GHz lowers gradually with the radiation dose. It has been found that the radiation hardness is greater than 10⁷ rad for all types of HEMTs and over a hundred years of life can be expected against γ-ray irradiation in the space environment.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.9 pp.1379-1383

Publication Date: 1993/09/25

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Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Electron Devices)

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Yasunobu SAITO, Fumio SASAKI, Hisao KAWASAKI, Hiroshi ISHIMURA, Hirokuni TOKUDA, Motoharu OHTOMO, "Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 9, pp. 1379-1383, September 1993, doi: .
Abstract: Gamma(γ)-ray irradiation effects have been investigated on three types of low-noise HEMTs, AlGaAs/GaAs conventional HEMT (conv. HEMT), AlGaAs/InGaAs pseudomorphic HEMT (P-HEMT) and InAlAs/InGaAs/InP HEMT (InP-based HEMT). The dose of irradiated γ-rays ranges from 110⁵ to 110⁸ rad. DC and RF characteristics of each type of HEMT are measured before and after irradiation and the parameter changes are investigated. For conv. HEMT and P-HEMT, no degradation of DC parameter is observed up to 10⁸ rad, while noise figure (NF) at 12 GHz remains constant up to 10⁷ rad and degrades by 0.1 dB at 10⁸ rad. The InP-based HEMT shows I_DSS and g_m increase by about 10% at a dose of 10⁸ rad and its NF at 18 GHz lowers gradually with the radiation dose. It has been found that the radiation hardness is greater than 10⁷ rad for all types of HEMTs and over a hundred years of life can be expected against γ-ray irradiation in the space environment.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_9_1379/_p

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@ARTICLE{e76-c_9_1379,
author={Yasunobu SAITO, Fumio SASAKI, Hisao KAWASAKI, Hiroshi ISHIMURA, Hirokuni TOKUDA, Motoharu OHTOMO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation},
year={1993},
volume={E76-C},
number={9},
pages={1379-1383},
abstract={Gamma(γ)-ray irradiation effects have been investigated on three types of low-noise HEMTs, AlGaAs/GaAs conventional HEMT (conv. HEMT), AlGaAs/InGaAs pseudomorphic HEMT (P-HEMT) and InAlAs/InGaAs/InP HEMT (InP-based HEMT). The dose of irradiated γ-rays ranges from 110⁵ to 110⁸ rad. DC and RF characteristics of each type of HEMT are measured before and after irradiation and the parameter changes are investigated. For conv. HEMT and P-HEMT, no degradation of DC parameter is observed up to 10⁸ rad, while noise figure (NF) at 12 GHz remains constant up to 10⁷ rad and degrades by 0.1 dB at 10⁸ rad. The InP-based HEMT shows I_DSS and g_m increase by about 10% at a dose of 10⁸ rad and its NF at 18 GHz lowers gradually with the radiation dose. It has been found that the radiation hardness is greater than 10⁷ rad for all types of HEMTs and over a hundred years of life can be expected against γ-ray irradiation in the space environment.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1379
EP - 1383
AU - Yasunobu SAITO
AU - Fumio SASAKI
AU - Hisao KAWASAKI
AU - Hiroshi ISHIMURA
AU - Hirokuni TOKUDA
AU - Motoharu OHTOMO
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1993
AB - Gamma(γ)-ray irradiation effects have been investigated on three types of low-noise HEMTs, AlGaAs/GaAs conventional HEMT (conv. HEMT), AlGaAs/InGaAs pseudomorphic HEMT (P-HEMT) and InAlAs/InGaAs/InP HEMT (InP-based HEMT). The dose of irradiated γ-rays ranges from 110⁵ to 110⁸ rad. DC and RF characteristics of each type of HEMT are measured before and after irradiation and the parameter changes are investigated. For conv. HEMT and P-HEMT, no degradation of DC parameter is observed up to 10⁸ rad, while noise figure (NF) at 12 GHz remains constant up to 10⁷ rad and degrades by 0.1 dB at 10⁸ rad. The InP-based HEMT shows I_DSS and g_m increase by about 10% at a dose of 10⁸ rad and its NF at 18 GHz lowers gradually with the radiation dose. It has been found that the radiation hardness is greater than 10⁷ rad for all types of HEMTs and over a hundred years of life can be expected against γ-ray irradiation in the space environment.
ER -