IEICE TRANSACTIONS on Electronics
MNOS Nonvolatile Semiconductor Memory Technology: Present and Future
Summary :
We have manufactured large-scaled highly reliable MNOS EEPROMs over the last twenty years. In particular, at the present time, the smart-card microcontroller incorporating an embedded 32-kB MNOS EEPROM is rapidly expanding the markets for mobile applications. It might be said that we have established the conventional MNOS nonvolatile semiconductor memory technology. This paper describes the device design concepts of the MNOS memory, which include the optimization and control of the tunnel oxide film thickness (1.8 nm), and the scaling guideline that considers the charge distribution in the trapping nitride film. We have developed a high-performance MONOS structure and have not found any failure due to the MONOS devices in high-density EEPROM products during 10-year data retention tests after 105 erase/write cycles. The future development of this highly reliable MNOS-type memory will be focussed on the high-density cell structure and high-speed programming method. Recently, some promising ideas for utilizing an MNOS-type memory device, such as 1-Tr/bit cell for byte-erasable full-featured EEPROMs and 2-bit/Tr cell for flash EEPROMs have been proposed. We are convinced that MNOS technology will advance into the area of nonvolatile semiconductor memories because of its high reliability and high yield of products.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.6 pp.713-723
- Publication Date
- 2001/06/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Nonvolatile Memories)
- Category
- MNOS Memory
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Keyword
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Yoshiaki KAMIGAKI, Shin'ichi MINAMI, "MNOS Nonvolatile Semiconductor Memory Technology: Present and Future" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 713-723, June 2001, doi: .
Abstract: We have manufactured large-scaled highly reliable MNOS EEPROMs over the last twenty years. In particular, at the present time, the smart-card microcontroller incorporating an embedded 32-kB MNOS EEPROM is rapidly expanding the markets for mobile applications. It might be said that we have established the conventional MNOS nonvolatile semiconductor memory technology. This paper describes the device design concepts of the MNOS memory, which include the optimization and control of the tunnel oxide film thickness (1.8 nm), and the scaling guideline that considers the charge distribution in the trapping nitride film. We have developed a high-performance MONOS structure and have not found any failure due to the MONOS devices in high-density EEPROM products during 10-year data retention tests after 105 erase/write cycles. The future development of this highly reliable MNOS-type memory will be focussed on the high-density cell structure and high-speed programming method. Recently, some promising ideas for utilizing an MNOS-type memory device, such as 1-Tr/bit cell for byte-erasable full-featured EEPROMs and 2-bit/Tr cell for flash EEPROMs have been proposed. We are convinced that MNOS technology will advance into the area of nonvolatile semiconductor memories because of its high reliability and high yield of products.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_713/_p
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@ARTICLE{e84-c_6_713,
author={Yoshiaki KAMIGAKI, Shin'ichi MINAMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={MNOS Nonvolatile Semiconductor Memory Technology: Present and Future},
year={2001},
volume={E84-C},
number={6},
pages={713-723},
abstract={We have manufactured large-scaled highly reliable MNOS EEPROMs over the last twenty years. In particular, at the present time, the smart-card microcontroller incorporating an embedded 32-kB MNOS EEPROM is rapidly expanding the markets for mobile applications. It might be said that we have established the conventional MNOS nonvolatile semiconductor memory technology. This paper describes the device design concepts of the MNOS memory, which include the optimization and control of the tunnel oxide film thickness (1.8 nm), and the scaling guideline that considers the charge distribution in the trapping nitride film. We have developed a high-performance MONOS structure and have not found any failure due to the MONOS devices in high-density EEPROM products during 10-year data retention tests after 105 erase/write cycles. The future development of this highly reliable MNOS-type memory will be focussed on the high-density cell structure and high-speed programming method. Recently, some promising ideas for utilizing an MNOS-type memory device, such as 1-Tr/bit cell for byte-erasable full-featured EEPROMs and 2-bit/Tr cell for flash EEPROMs have been proposed. We are convinced that MNOS technology will advance into the area of nonvolatile semiconductor memories because of its high reliability and high yield of products.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - MNOS Nonvolatile Semiconductor Memory Technology: Present and Future
T2 - IEICE TRANSACTIONS on Electronics
SP - 713
EP - 723
AU - Yoshiaki KAMIGAKI
AU - Shin'ichi MINAMI
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - We have manufactured large-scaled highly reliable MNOS EEPROMs over the last twenty years. In particular, at the present time, the smart-card microcontroller incorporating an embedded 32-kB MNOS EEPROM is rapidly expanding the markets for mobile applications. It might be said that we have established the conventional MNOS nonvolatile semiconductor memory technology. This paper describes the device design concepts of the MNOS memory, which include the optimization and control of the tunnel oxide film thickness (1.8 nm), and the scaling guideline that considers the charge distribution in the trapping nitride film. We have developed a high-performance MONOS structure and have not found any failure due to the MONOS devices in high-density EEPROM products during 10-year data retention tests after 105 erase/write cycles. The future development of this highly reliable MNOS-type memory will be focussed on the high-density cell structure and high-speed programming method. Recently, some promising ideas for utilizing an MNOS-type memory device, such as 1-Tr/bit cell for byte-erasable full-featured EEPROMs and 2-bit/Tr cell for flash EEPROMs have been proposed. We are convinced that MNOS technology will advance into the area of nonvolatile semiconductor memories because of its high reliability and high yield of products.
ER -
English
