Chemical Stability of SrBi2Ta2O9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
Summary :
The chemical stability of the constituent elements in polycrystalline Sr-Bi-Ta-O thin film with various Bi content prepared by metalorganic chemical vapor deposition (MOCVD) was investigated by X-ray photoelectron spectroscopy (XPS). Moreover, that of the epitaxial films was also investigated to estimate the effect of the grain boundary in polycrystalline films. Therefore, only the Bi element drastically changed from Bi3+ state to Bi0 one by the Ar sputtering. This change increased with increasing the Ta/Bi mole ratio in the film from 0.64 to 1.67. This result was observed not only for the polycrystalline films but also for the epitaxial films, suggesting that this is the grain character not grain boundary one. The stability and the leakage character of the film strongly depend on the constituent of the film.
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- IEICE TRANSACTIONS on Electronics Vol.E84-C No.6 pp.791-795
- Publication Date
- 2001/06/01
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Nonvolatile Memories)
- Category
- FeRAMs
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Norimasa NUKAGA, Masatoshi MITSUYA, Hiroshi FUNAKUBO, "Chemical Stability of SrBi2Ta2O9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 791-795, June 2001, doi: .
Abstract: The chemical stability of the constituent elements in polycrystalline Sr-Bi-Ta-O thin film with various Bi content prepared by metalorganic chemical vapor deposition (MOCVD) was investigated by X-ray photoelectron spectroscopy (XPS). Moreover, that of the epitaxial films was also investigated to estimate the effect of the grain boundary in polycrystalline films. Therefore, only the Bi element drastically changed from Bi3+ state to Bi0 one by the Ar sputtering. This change increased with increasing the Ta/Bi mole ratio in the film from 0.64 to 1.67. This result was observed not only for the polycrystalline films but also for the epitaxial films, suggesting that this is the grain character not grain boundary one. The stability and the leakage character of the film strongly depend on the constituent of the film.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_791/_p
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@ARTICLE{e84-c_6_791,
author={Norimasa NUKAGA, Masatoshi MITSUYA, Hiroshi FUNAKUBO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Chemical Stability of SrBi2Ta2O9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition},
year={2001},
volume={E84-C},
number={6},
pages={791-795},
abstract={The chemical stability of the constituent elements in polycrystalline Sr-Bi-Ta-O thin film with various Bi content prepared by metalorganic chemical vapor deposition (MOCVD) was investigated by X-ray photoelectron spectroscopy (XPS). Moreover, that of the epitaxial films was also investigated to estimate the effect of the grain boundary in polycrystalline films. Therefore, only the Bi element drastically changed from Bi3+ state to Bi0 one by the Ar sputtering. This change increased with increasing the Ta/Bi mole ratio in the film from 0.64 to 1.67. This result was observed not only for the polycrystalline films but also for the epitaxial films, suggesting that this is the grain character not grain boundary one. The stability and the leakage character of the film strongly depend on the constituent of the film.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Chemical Stability of SrBi2Ta2O9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
T2 - IEICE TRANSACTIONS on Electronics
SP - 791
EP - 795
AU - Norimasa NUKAGA
AU - Masatoshi MITSUYA
AU - Hiroshi FUNAKUBO
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - The chemical stability of the constituent elements in polycrystalline Sr-Bi-Ta-O thin film with various Bi content prepared by metalorganic chemical vapor deposition (MOCVD) was investigated by X-ray photoelectron spectroscopy (XPS). Moreover, that of the epitaxial films was also investigated to estimate the effect of the grain boundary in polycrystalline films. Therefore, only the Bi element drastically changed from Bi3+ state to Bi0 one by the Ar sputtering. This change increased with increasing the Ta/Bi mole ratio in the film from 0.64 to 1.67. This result was observed not only for the polycrystalline films but also for the epitaxial films, suggesting that this is the grain character not grain boundary one. The stability and the leakage character of the film strongly depend on the constituent of the film.
ER -
English
