Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO3 Film Capacitors by 2-Step Deposition
Summary :
A 2-step deposition technique was introduced in the heteroepitaxial growth of barium titanate (BaTiO3) thin films. Heteroepitaxial BaTiO3 films were prepared on a SrRuO3/SrTiO3 substrate by radio frequency (RF) magnetron sputtering with three kinds of deposition method: low RF-power deposition, 2-step deposition, and high power deposition. The crystallographic and ferroelectric properties were evaluated for the heteroepitaxial films. When the epitaxial capacitor was prepared by the 2-step deposition technique, the ferroelectric remanent polarization, 2Pr, was maximized. The optimized deposition condition to improve the crystal quality is discussed in terms of damage and diffusion, which could be introduced into the oxide films during the epitaxial growth, and controlled by the RF-power and deposition time, respectively.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.6 pp.796-801
- Publication Date
- 2001/06/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Nonvolatile Memories)
- Category
- FeRAMs
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Naoko YANASE, Kazuhide ABE, Noburu FUKUSHIMA, Takashi KAWAKUBO, "Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO3 Film Capacitors by 2-Step Deposition" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 796-801, June 2001, doi: .
Abstract: A 2-step deposition technique was introduced in the heteroepitaxial growth of barium titanate (BaTiO3) thin films. Heteroepitaxial BaTiO3 films were prepared on a SrRuO3/SrTiO3 substrate by radio frequency (RF) magnetron sputtering with three kinds of deposition method: low RF-power deposition, 2-step deposition, and high power deposition. The crystallographic and ferroelectric properties were evaluated for the heteroepitaxial films. When the epitaxial capacitor was prepared by the 2-step deposition technique, the ferroelectric remanent polarization, 2Pr, was maximized. The optimized deposition condition to improve the crystal quality is discussed in terms of damage and diffusion, which could be introduced into the oxide films during the epitaxial growth, and controlled by the RF-power and deposition time, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_796/_p
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@ARTICLE{e84-c_6_796,
author={Naoko YANASE, Kazuhide ABE, Noburu FUKUSHIMA, Takashi KAWAKUBO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO3 Film Capacitors by 2-Step Deposition},
year={2001},
volume={E84-C},
number={6},
pages={796-801},
abstract={A 2-step deposition technique was introduced in the heteroepitaxial growth of barium titanate (BaTiO3) thin films. Heteroepitaxial BaTiO3 films were prepared on a SrRuO3/SrTiO3 substrate by radio frequency (RF) magnetron sputtering with three kinds of deposition method: low RF-power deposition, 2-step deposition, and high power deposition. The crystallographic and ferroelectric properties were evaluated for the heteroepitaxial films. When the epitaxial capacitor was prepared by the 2-step deposition technique, the ferroelectric remanent polarization, 2Pr, was maximized. The optimized deposition condition to improve the crystal quality is discussed in terms of damage and diffusion, which could be introduced into the oxide films during the epitaxial growth, and controlled by the RF-power and deposition time, respectively.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO3 Film Capacitors by 2-Step Deposition
T2 - IEICE TRANSACTIONS on Electronics
SP - 796
EP - 801
AU - Naoko YANASE
AU - Kazuhide ABE
AU - Noburu FUKUSHIMA
AU - Takashi KAWAKUBO
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - A 2-step deposition technique was introduced in the heteroepitaxial growth of barium titanate (BaTiO3) thin films. Heteroepitaxial BaTiO3 films were prepared on a SrRuO3/SrTiO3 substrate by radio frequency (RF) magnetron sputtering with three kinds of deposition method: low RF-power deposition, 2-step deposition, and high power deposition. The crystallographic and ferroelectric properties were evaluated for the heteroepitaxial films. When the epitaxial capacitor was prepared by the 2-step deposition technique, the ferroelectric remanent polarization, 2Pr, was maximized. The optimized deposition condition to improve the crystal quality is discussed in terms of damage and diffusion, which could be introduced into the oxide films during the epitaxial growth, and controlled by the RF-power and deposition time, respectively.
ER -
English
