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Electron Transport in Metal-Amorphous Silicon-Metal Memory Devices

Jian HU, Janos HAJTO, Anthony J. SNELL, Mervyn J. ROSE

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Summary :

Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13 K to 300 K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.

Publication
IEICE TRANSACTIONS on Electronics Vol.E84-C No.9 pp.1197-1201
Publication Date
2001/09/01
Publicized
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DOI
Type of Manuscript
Special Section PAPER (Special Issue on Selected Papers from the 5th Asian Symposium on Information Storage Technology)
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