IEICE TRANSACTIONS on Electronics
Electron Transport in Metal-Amorphous Silicon-Metal Memory Devices
Summary :
Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13 K to 300 K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.
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- IEICE TRANSACTIONS on Electronics Vol.E84-C No.9 pp.1197-1201
- Publication Date
- 2001/09/01
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- Special Section PAPER (Special Issue on Selected Papers from the 5th Asian Symposium on Information Storage Technology)
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Jian HU, Janos HAJTO, Anthony J. SNELL, Mervyn J. ROSE, "Electron Transport in Metal-Amorphous Silicon-Metal Memory Devices" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 9, pp. 1197-1201, September 2001, doi: .
Abstract: Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13 K to 300 K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_9_1197/_p
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@ARTICLE{e84-c_9_1197,
author={Jian HU, Janos HAJTO, Anthony J. SNELL, Mervyn J. ROSE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electron Transport in Metal-Amorphous Silicon-Metal Memory Devices},
year={2001},
volume={E84-C},
number={9},
pages={1197-1201},
abstract={Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13 K to 300 K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.},
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - Electron Transport in Metal-Amorphous Silicon-Metal Memory Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 1197
EP - 1201
AU - Jian HU
AU - Janos HAJTO
AU - Anthony J. SNELL
AU - Mervyn J. ROSE
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2001
AB - Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13 K to 300 K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.
ER -
English
