A GaInNAs alloy on GaAs substrate has been very promising for long-wavelength vertical-cavity surface-emitting lasers (VCSELs) as an active layer. In spite of many groups reported the excellent temperature characteristics of the threshold current of the GaInNAs/GaAs edge-emitting lasers, discussions of the temperature dependence of the lasing characteristics except threshold current is few. In this paper, temperature characteristics of GaInNAs lasers grown by chemical beam epitaxy (CBE) emitting at λ=1.27 µm and λ=1.30 µm were investigated in detail. The characteristic temperature (T0) ranging from 10 to 80
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Takeo KAGEYAMA, Tomoyuki MIYAMOTO, Shigeki MAKINO, Yoshihiko IKENAGA, Fumio KOYAMA, Kenichi IGA, "Temperature Characteristics of λ=1.3 µm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 1, pp. 71-78, January 2002, doi: .
Abstract: A GaInNAs alloy on GaAs substrate has been very promising for long-wavelength vertical-cavity surface-emitting lasers (VCSELs) as an active layer. In spite of many groups reported the excellent temperature characteristics of the threshold current of the GaInNAs/GaAs edge-emitting lasers, discussions of the temperature dependence of the lasing characteristics except threshold current is few. In this paper, temperature characteristics of GaInNAs lasers grown by chemical beam epitaxy (CBE) emitting at λ=1.27 µm and λ=1.30 µm were investigated in detail. The characteristic temperature (T0) ranging from 10 to 80
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_1_71/_p
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@ARTICLE{e85-c_1_71,
author={Takeo KAGEYAMA, Tomoyuki MIYAMOTO, Shigeki MAKINO, Yoshihiko IKENAGA, Fumio KOYAMA, Kenichi IGA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Temperature Characteristics of λ=1.3 µm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy},
year={2002},
volume={E85-C},
number={1},
pages={71-78},
abstract={A GaInNAs alloy on GaAs substrate has been very promising for long-wavelength vertical-cavity surface-emitting lasers (VCSELs) as an active layer. In spite of many groups reported the excellent temperature characteristics of the threshold current of the GaInNAs/GaAs edge-emitting lasers, discussions of the temperature dependence of the lasing characteristics except threshold current is few. In this paper, temperature characteristics of GaInNAs lasers grown by chemical beam epitaxy (CBE) emitting at λ=1.27 µm and λ=1.30 µm were investigated in detail. The characteristic temperature (T0) ranging from 10 to 80
keywords={},
doi={},
ISSN={},
month={January},}
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TY - JOUR
TI - Temperature Characteristics of λ=1.3 µm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy
T2 - IEICE TRANSACTIONS on Electronics
SP - 71
EP - 78
AU - Takeo KAGEYAMA
AU - Tomoyuki MIYAMOTO
AU - Shigeki MAKINO
AU - Yoshihiko IKENAGA
AU - Fumio KOYAMA
AU - Kenichi IGA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2002
AB - A GaInNAs alloy on GaAs substrate has been very promising for long-wavelength vertical-cavity surface-emitting lasers (VCSELs) as an active layer. In spite of many groups reported the excellent temperature characteristics of the threshold current of the GaInNAs/GaAs edge-emitting lasers, discussions of the temperature dependence of the lasing characteristics except threshold current is few. In this paper, temperature characteristics of GaInNAs lasers grown by chemical beam epitaxy (CBE) emitting at λ=1.27 µm and λ=1.30 µm were investigated in detail. The characteristic temperature (T0) ranging from 10 to 80
ER -